Power-Transistor. IPP040N06N Datasheet

IPP040N06N Power-Transistor. Datasheet pdf. Equivalent

IPP040N06N Datasheet
Recommendation IPP040N06N Datasheet
Part IPP040N06N
Description Power-Transistor
Feature IPP040N06N; Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 10.
Manufacture Infineon Technologies
Datasheet
Download IPP040N06N Datasheet




Infineon Technologies IPP040N06N
Type
OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
IPP040N06N
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
4.0 mW
80 A
44 nC
38 nC
PG-TO220-3
Type
IPP040N06N
Package
PG-TO220-3
Marking
040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
80 A
80
V GS=10 V, T C=25 °C,
R thJA =50K/W
20
Pulsed drain current2)
I D,pulse T C=25 °C
320
Avalanche energy, single pulse3) E AS I D=80 A, R GS=25 W
70 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20



Infineon Technologies IPP040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPP040N06N
Value
107
3.0
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=50 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=80 A
V GS=6 V, I D=20 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=80 A
60
2.1
-
-
-
-
-
-
60
- 1.4 K/W
- 62
- 40
- -V
2.8 3.3
0.5 1 µA
10 100
10 100 nA
3.6 4.0 mW
4.7 6.0
1.3 1.95 W
120 - S
Rev.2.2
page 2
2012-12-20



Infineon Technologies IPP040N06N
Parameter
Symbol Conditions
IPP040N06N
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=80 A, R G,ext=3 W
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q gs
Q g(th)
Q gd
Q sw
V DD=30 V, I D=80 A,
V GS=0 to 10 V
Qg
V plateau
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
Q oss
V DD=30 V, V GS=0 V
Reverse Diode
Diode continuous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
Reverse recovery time
Reverse recovery charge
t rr V R=30 V, I F=80 A,
Q rr di F/dt =100 A/µs
5) See figure 16 for gate charge parameter definition
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2700
670
28
19
16
30
9
3375 pF
838
56
- ns
-
-
-
13 - nC
8-
79
13 -
38 44
4.9 - V
33 - nC
44 -
- 80 A
- 320
1.0 1.2 V
34 54 ns
34 - nC
Rev.2.2
page 3
2012-12-20







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