IPB014N06N

Type OptiMOSTM Power-Transistor Features Optimized for synchronous rectification 100% avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) IPB014N06N 60 V 1.4 mW 180 A 119 nC 106 nC Type IPB014N06N Package TO263-7 Marking 014N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V,T C=100 °C 180 A 180 V GS=10 V, T C=25 °C, R thJA =50K/W 34 Pulsed drain current2) I D,pulse T C=25 °C 720 Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W 420 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 1 2012-12-20 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=50 K/W Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 IPB014N06N Value 214 3.0 -55 ... 175 55/175/56 Unit W °C Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteri...