Power Transistor. IPB014N06N Datasheet

IPB014N06N Transistor. Datasheet pdf. Equivalent

IPB014N06N Datasheet
Recommendation IPB014N06N Datasheet
Part IPB014N06N
Description Power Transistor
Feature IPB014N06N; Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche.
Manufacture Infineon Technologies
Datasheet
Download IPB014N06N Datasheet




Infineon Technologies IPB014N06N
Type
OptiMOSTM Power-Transistor
Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
IPB014N06N
60 V
1.4 mW
180 A
119 nC
106 nC
Type
IPB014N06N
Package
TO263-7
Marking
014N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V,T C=100 °C
180 A
180
V GS=10 V, T C=25 °C,
R thJA =50K/W
34
Pulsed drain current2)
I D,pulse T C=25 °C
720
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
420 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 1
2012-12-20



Infineon Technologies IPB014N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPB014N06N
Value
214
3.0
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
- 0.7 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=143 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1 µA
V DS=60 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I GSS
V GS=20 V, V DS=60 V
R DS(on) V GS=10 V, I D=100 A
V GS=6 V, I D=25 A
RG
-
-
-
-
10 100 nA
1.2 1.4 mW
1.5 2.1
1.6 2.4 W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
120
230
-S
Rev. 2.2
page 2
2012-12-20



Infineon Technologies IPB014N06N
Parameter
Symbol Conditions
IPB014N06N
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=100 A,
R G,ext,ext=1.6 W
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q gs
Q g(th)
Q gd
Q sw
V DD=30 V, I D=100 A,
V GS=0 to 10 V
Qg
V plateau
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
Q oss
V DD=30 V, V GS=0 V
Reverse Diode
Diode continuous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
Reverse recovery time
Reverse recovery charge
t rr V R=30 V, I F=100A ,
Q rr di F/dt =100 A/µs
5) See figure 16 for gate charge parameter definition
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7800
1800
69
22
18
47
14
9750 pF
2250
138
- ns
-
-
-
35 - nC
22 -
19 25
32 -
106 124
4.5 - V
94 - nC
119 -
- 180 A
- 720
0.9 1.2 V
67 107 ns
112 - nC
Rev. 2.2
page 3
2012-12-20







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