SPA20N60CFD
CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Intrinsic fast-recovery b...
SPA20N60CFD
CoolMOSTM Power
Transistor
Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge
Product Summary VDS RDS(on),max ID1)
600 V 0.22 W 20.7 A
Ultra low gate charge Extreme dv /dt rated
PG-TO220-3-31
High peak current capability
Periodic avalanche rated Qualified for industrial grade applications according to JEDEC0)
Pb-free lead plating; RoHS compliant
Type SPA20N60CFD
Package
Ordering Code Marking
PG-TO220-3-31 SP000216361 20N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1) Pulsed drain current2)
ID I D,pulse
T C=25 °C T C=100 °C T C=25 °C
Avalanche energy, single pulse
E AS I D=10 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
E AR I AR
Drain source voltage slope
dv /dt
I D=20 A, V DD=50 V
I D=20.7 A, V DS=480 V, T j=125 °C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
Gate source voltage
V GS
I S=20.7 A, V DS=480 V, T j=125 °C
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value 20.7 13.1 52 690
1 20
80
40 900 ±20 ±30 35 -55 ... +150
Unit A
mJ
A V/ns V/ns A/µs V W °C
Rev. 1.4
page 1
2012-02-19
SPA20N60CFD
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
- - 3.6 K/W...
