Power Transistor. SPA20N60CFD Datasheet

SPA20N60CFD Transistor. Datasheet pdf. Equivalent


Infineon Technologies SPA20N60CFD
SPA20N60CFD
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
Product Summary
VDS
RDS(on),max
ID1)
600 V
0.22 W
20.7 A
• Ultra low gate charge
• Extreme dv /dt rated
PG-TO220-3-31
• High peak current capability
• Periodic avalanche rated
• Qualified for industrial grade applications according to JEDEC0)
• Pb-free lead plating; RoHS compliant
Type
SPA20N60CFD
Package
Ordering Code Marking
PG-TO220-3-31 SP000216361 20N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS I D=10 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
E AR
I AR
Drain source voltage slope
dv /dt
I D=20 A, V DD=50 V
I D=20.7 A,
V DS=480 V,
T j=125 °C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
Gate source voltage
V GS
I S=20.7 A,
V DS=480 V,
T j=125 °C
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value
20.7
13.1
52
690
1
20
80
40
900
±20
±30
35
-55 ... +150
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Rev. 1.4
page 1
2012-02-19


SPA20N60CFD Datasheet
Recommendation SPA20N60CFD Datasheet
Part SPA20N60CFD
Description Power Transistor
Feature SPA20N60CFD; SPA20N60CFD CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Intri.
Manufacture Infineon Technologies
Datasheet
Download SPA20N60CFD Datasheet




Infineon Technologies SPA20N60CFD
SPA20N60CFD
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
- - 3.6 K/W
Thermal resistance, junction -
ambient
R thJA leaded
- - 62
Soldering temperature, wave
soldering
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=250 µA
600
V (BR)DS V GS=0 V, I D=20 A
-
V GS(th) V DS=V GS, I D=1000µA
3
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
RG
g fs
V GS=10 V, I D=13.1 A,
T j=25 °C
V GS=10 V, I D=13.1 A,
T j=150 °C
f =1 MHz, open drain
|V DS|>2|I D|R DS(on)max,
I D=13.1 A
-
-
-
-
-
-
-
-
700
4
2.1
1700
-
0.19
0.43
0.54
17.5
-V
-
5
- µA
-
100 nA
0.22 W
-
-
-S
Rev. 1.4
page 2
2012-02-19



Infineon Technologies SPA20N60CFD
Parameter
Symbol Conditions
SPA20N60CFD
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
Effective output capacitance, energy
related4)
C o(er)
Effective output capacitance, time
related5)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=380 V,
V GS=10 V, I D=20.7 A,
R G=3.6 W
-
-
-
-
-
-
-
-
-
2400
780
50
83
160
12
15
59
6.4
- pF
-
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
Gate plateau voltage
V plateau
0) J-STD20 and JESD22
1) Limited only by maximum temperature.
V DD=480 V,
I D=20.7 A,
V GS=0 to 10 V
- 15 - nC
- 54 -
- 95 124
- 7.0 - V
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 1.4
page 3
2012-02-19







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