SPP24N60CFD

SPP24N60CFD CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Product Summary V DS @ Tjmax R DS(on),max ID Extreme dv /dt rated High peak current capability Qualified for industrial grade applications according to JEDEC1) 650 V 0.185 " 21.7 A PG-TO220 CoolMOS CFD designed for Softswitching PWM Stages LCD & CRT TV Type SPP24N60CFD Package TPOG-2T2O0220 Marking 24N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive2),3) Avalanche current, repetitive2),3) ID I D,pulse E AS E AR I AR T C=25 °C T C=100 °C T C=25 °C I D=10A, V DD=50 V I D=20A, V DD=50 V Drain source voltage slope dv /dt I D=21.7A, V DS=480V, T j=125°C Reverse diode dv /dt dv /dt Maximum diode commutation speed di /dt I S=21.7A, V DS=480 V, T j=125°C Gate source voltage V GS static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 & M3.5 screws Value 21.7 13.7 55 780 1 20 80 40 600 ±20 ±30 240 -55 ... 150 60 Unit A mJ A V/ns V/ns A/µs V W °C Ncm Rev. 1.3 page 1 2009-12-01 SPP24N60CFD Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded Soldering temperature, wave soldering only al...