High Speed Power Switching SJ MOS FET
Preliminary Datasheet
RJK60S3DPE
600V - 12A - SJ MOS FET High Speed Power Switching
R07DS0732EJ0200 Rev.2.00
Oct 12, 2...
Description
Preliminary Datasheet
RJK60S3DPE
600V - 12A - SJ MOS FET High Speed Power Switching
R07DS0732EJ0200 Rev.2.00
Oct 12, 2012
Features
Superjunction MOSFET Low on-resistance
RDS(on) = 0.35 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) High speed switching
tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C)
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4
123
G
D S
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Maximum duty cycle D = 0.75.
3. STch = 25C, Tch 150C
4. Value at Tc = 25C
Symbol
VDSS
VGSS
ID Note1,2
ID Note1,2
ID
Note1 (pulse)
IDR Note1
IDR
Note1 (pulse)
IAPNote3
EARNote3
Pch Note4
ch-c
Tch
Tstg
Ratings 600
+30, 20 12.0 7.6 24 12 24 3 0.49 83.3 1.5 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A A A mJ W
C/W C C
R07DS0732EJ0200 Rev.2.00 Oct 12, 2012
Page 1 of 7
RJK60S3DPE
Electrical Characteristics
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance
Symbol V(BR)DSS
IDSS IGSS VGS(off) ...
Similar Datasheet