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2SK2672. K2672 Datasheet |
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SHINDENGEN
HVX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2672
( F5W90HVX2 )
OUTLINE DIMENSIONS
Case : MTO-3P
(Unit : mm)
900V 5A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
APPLICATION
●Switching power supply of AC 240V input
●High voltage power supply
●Inverter
RATINGS
●Absolute Maximum Ratings
Item
Storage Temperature
Channel Temperature
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current（DC）
Continuous Drain Current（Peak)
Continuous Source Current（DC）
Total Power Dissipation
Repetitive Avalanche Current
Single Avalanche Energy
Repetitive Avalanche Energy
Mounting Torque
（Tc = 25℃）
Symbol
Tstg
Tch
VDSS
VGSS
ID
IDP
IS
PT
IAR
EAS
EAR
TOR
Conditions
Pulse width≦10μs, Duty cycle≦1/100
Tch = 150℃
Tch = 25℃
Tch = 25℃
（ Recommended torque ：0.5 N･m ）
Ratings
-55～150
150
900
±30
5
10
5
80
5
100
10
0.8
Unit
℃
V
A
W
A
mJ
N･m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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HVX-2 Series Power MOSFET
2SK2672 ( F5W90HVX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 900V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±30V, VDS = 0V
Forward Tranｓconductance
gfs ID = 2.5A, VDS = 10V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 2.5A, VGS = 10V
Gate Threshold Voltage
VTH ID = 1mA, VDS = 10V
Source-Drain Diode Forward Voltage
VSD IS = 2.5A, VGS = 0V
Thermal Resistance
θjc junction to case
Total Gate Charge
Qg VDD = 400V, VGS = 10V, ID = 5A
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 25V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 2.5A, RL = 60Ω, VGS = 10V
Turn-Off Time
toff
Min. Typ. Max. Unit
900 V
250 μA
±0.1
2.4 4.0
S
2.1 2.8 Ω
2.5 3.0 3.5 V
1.5
1.56 ℃/Ｗ
45 nC
1140
23 pF
105
55 100 ns
210 350
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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2SK2672
10
Tc = −55°C
8
Transfer Characteristics
25°C
6 100°C
150°C
4
2
VDS = 25V
TYP
0
0 5 10 15 20
Gate-Source Voltage VGS [V]
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