isc Silicon PNP Power Transistor
DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage-
: V(BR)CEO= ...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Complement to Type 2SD2033 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-1.5
A
1.8 W
20
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1353
isc website:www.iscsemi.com
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Cain
IC= -0.1A ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.1A ; VCE= -5V
hFE Classifications
D
E
F
60-120 100-200 160-320
2SB1353
MIN TYP. MAX UNIT
-120
V
-120
V
-5
V
-2.0
V
-10 μA
-10 μA
60
32...