N-Channel JFET. TF252 Datasheet

TF252 JFET. Datasheet pdf. Equivalent


ON Semiconductor TF252
Ordering number : ENA0841B
TF252
N-Channel JFET
20V, 140 to 350μA, 1.4mS, USFP
http://onsemi.com
Features
High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz)
Ultrasmall package facilitates miniaturization in end products [1.0mm×0.6mm×0.27mm (max 0.3mm)]
Best suited for use in Electret Condenser Microphone for audio equipments and telephones
Excellent voltage characteristics
Excellent transient characteristics
Adoption of FBET process
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
VGDO
IG
ID
PD
Tj
Storage Temperature
Tstg
Conditions
Ratings
--20
10
1
30
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7055-001
0.6
0.2
3
TF252-4-TL-H
0.11 TF252-5-TL-H
0 to 0.02
1
0.175
2
0.15
12
1 : Drain
2 : Source
3 : Gate
3
USFP
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 10,000 pcs./reel
Packing Type: TL
Marking
3
DTL
Electrical Connection
1
12
3
2
Semiconductor Components Industries, LLC, 2013
August, 2013
O1012 TKIM/92612 TKIM/70407GB TIIM TC-00000793 No. A0841-1/7


TF252 Datasheet
Recommendation TF252 Datasheet
Part TF252
Description N-Channel JFET
Feature TF252; Ordering number : ENA0841B TF252 N-Channel JFET 20V, 140 to 350μA, 1.4mS, USFP http://onsemi.com .
Manufacture ON Semiconductor
Datasheet
Download TF252 Datasheet




ON Semiconductor TF252
TF252
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDO IG=--100μA
Cutoff Voltage
VGS(off)
VDS=2V, ID=1μA
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
IDSS
| yfs |
Ciss
Crss
VDS=2V, VGS=0V
VDS=2V, VGS=0V, f=1kHz
VDS=2V, VGS=0V, f=1MHz
[Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specied Test Circuit.]
Voltage Gain
GV VIN=10mV, f=1kHz
Reduced Voltage Characteristic
Frequency Characteristic
ΔGVV
ΔGvf
VIN=10mV, f=1kHz, VCC=2.0V 1.5V
f=1kHz to 110Hz
Total Harmonic Distortion
Output Noise Voltage
THD
VNO
VIN=30mV, f=1kHz
VIN=0V, A curve
* : The TF252 is classied by IDSS as follows : (unit : μA)
Rank
4
5
IDSS
140 to 240
210 to 350
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
2.2kΩ
5pF 33μF
+
VCC=2V
VCC=1.5V
OSC
VTVM V THD
min
--20
--0.1
140*
0.8
Ratings
typ
--0.4
1.4
3.1
0.95
max
--1.0
350*
Unit
V
V
μA
mS
pF
pF
1.0
--0.6
0.65
--106
--2.0
--1.0
--102
dB
dB
dB
%
dB
Ordering Information
Device
TF252-4-TL-H
TF252-5-TL-H
Package
USFP
USFP
Shipping
10,000pcs./reel
10,000pcs./reel
memo
Pb Free and Halogen Free
ID -- VDS
300
250 VGS=0V
200
--0.05V
150
--0.10V
100
--0.15V
50 --0.20V
--0.25V
--0.30V
0
0 0.5 1.0 1.5 2.0
Drain-to-Source Voltage, VDS -- V IT12440
ID -- VDS
350
300 VGS=0V
250
200
--0.1V
150
100
--0.2V
50
--0.3V
--0.4V
0
012345
Drain-to-Source Voltage, VDS -- V IT12441
No. A0841-2/7



ON Semiconductor TF252
TF252
ID -- VGS
400
VDS=2V
350
300
250
200
150
100
50
0
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
Gate-to-Source Voltage, VGS -- V
yfs-- IDSS
1.7
VDS=2V
1.6
VGS=0V
f=1kHz
IT12442
1.5
1.4
1.3
1.2
1.1
1.0
100 150 200 250 300 350 400
Zero-Gate Voltage Drain Current, IDSS -- μA IT12444
Ciss -- VDS
10
VGS=0V
f=1MHz
7
5
ID -- VGS
400
VDS=2V
350
300
250
200
150
100
50
0
--0.6
--0.60
--0.55
--0.5
--0.4
--0.3
--0.2
--0.1
0
Gate-to-Source Voltage, VGS -- V IT12443
VGS(off) -- IDSS
VDS=2V
ID=1μA
--0.50
--0.45
--0.40
--0.35
--0.30
--0.25
--0.20
100 150 200 250 300 350 400
Zero-Gate Voltage Drain Current, IDSS -- μA IT12445
Crss -- VDS
3
VGS=0V
f=1MHz
2
1.0
3
7
2
5
1.0
5
7 1.0
23
5 7 10
Drain-to-Source Voltage, VDS -- V
GV -- IDSS
1.8
GV : VCC=2V
1.6 VIN=10mV
1.4 f=1kHz
RL=2.2kΩ
1.2 Cin=5pF
1.0 IDSS : VDS=2V
23
IT12446
0.8
0.6
0.4
0.2
0
--0.2
--0.4
100 150 200 250 300 350 400
Zero-Gate Voltage Drain Current, IDSS -- μA IT12448
3
5 7 1.0
23
5 7 10
23
Drain-to-Source Voltage, VDS -- V IT12447
ΔGVV -- IDSS
--0.2
ΔGVV : VCC=2V 1.5V
--0.3 VIN=10mV
f=1kHz
--0.4 RL=2.2kΩ
Cin=5pF
--0.5 IDSS : VDS=2V
--0.6
--0.7
--0.8
--0.9
--1.0
100 150 200 250 300 350 400
Zero-Gate Voltage Drain Current, IDSS -- μA IT12449
No. A0841-3/7







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