BUK7523-75A; BUK7623-75A
TrenchMOS™ standard level FET
Rev. 01 — 09 October 2000
Product specification
1. Description
...
BUK7523-75A; BUK7623-75A
TrenchMOS™ standard level FET
Rev. 01 — 09 October 2000
Product specification
1. Description
N-channel enhancement mode field-effect power
transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK).
2. Features
s TrenchMOS™ technology s Q101 compliant s 175 °C rated s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
c
c x 12 V, 24 V and 42 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g) 2 drain (d)
mb
3 source (s)
mb mounting base; connected to drain (d)
mb
MBK106
123
SOT78 (TO-220AB)
2 1 3 MBK116
SOT404 (D2-PAK)
Symbol
d
g
MBB076
s
Philips Semiconductors
BUK7523-75A; BUK7623-75A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS ID Ptot Tj RDSon
drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 10 V Tmb = 25 °C
VGS = 10 V; ID = 25 A Tj = 175 °C
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS VDGR VGS ID
drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain...