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BUK7520-55A Dataheets PDF



Part Number BUK7520-55A
Manufacturers Philips
Logo Philips
Description standard level FET
Datasheet BUK7520-55A DatasheetBUK7520-55A Datasheet (PDF)

BUK7520-55A; BUK7620-55A TrenchMOS™ standard level FET Rev. 01 — 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7520-55A in SOT78 (TO-220AB) BUK7620-55A in SOT404 (D 2-PAK). 2. Features s TrenchMOS™ technology s Q101 compliant s 175 °C rated s Standard level compatible. 3. Applications s Automotive and general purpos.

  BUK7520-55A   BUK7520-55A



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BUK7520-55A; BUK7620-55A TrenchMOS™ standard level FET Rev. 01 — 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7520-55A in SOT78 (TO-220AB) BUK7620-55A in SOT404 (D 2-PAK). 2. Features s TrenchMOS™ technology s Q101 compliant s 175 °C rated s Standard level compatible. 3. Applications s Automotive and general purpose power switching: c c x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78, SOT404, simplified outline and symbol Pin Description Simplified outline 1 gate (g) 2 drain (d) mb 3 source (s) mb mounting base; connected to drain (d) mb MBK106 123 SOT78 (TO-220AB) 2 1 3 MBK116 SOT404 (D2-PAK) Symbol d g MBB076 s Philips Semiconductors BUK7520-55A; BUK7620-55A TrenchMOS™ standard level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter VDS ID Ptot Tj RDSon drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance 6. Limiting values Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 IDM peak drain current Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Ptot total power dissipation Tstg storage temperature Tj operating junction temperature Source-drain diode Tmb = 25 °C; Figure 1 IDR reverse drain current (DC) IDRM pulsed reverse drain current Avalanche ruggedness Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs WDSS non-repetitive avalanche energy unclamped inductive load; ID = 48 A; VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C Typ Max Unit − 55 V − 54 A − 118 W − 175 °C 17 20 mΩ − 40 mΩ Min Max Unit − 55 V − 55 V − ±20 V − 54 A − 38 A − 217 A − 118 W −55 +175 °C −55 +175 °C − 54 A − 217 A − 115 mJ 9397 750 07751 Product specification Rev. 01 — 18 January 2001 © Philips Electronics N.V. 2001. All rights reserved. 2 of 15 Philips Semiconductors BUK7520-55A; BUK7620-55A TrenchMOS™ standard level FET 120 Pder (%) 100 03na19 80 60 40 20 0 0 25 50 75 100 125 150 175 200 Tmb (oC) Pder = -------P----t--o--t------P × 100 % t o t ( 25 °C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. 120 Ider (%) 100 03aa24 80 60 40 20 0 0 25 50 75 100 125 150 175 200 Tmb (oC) VGS ≥ 4.5 V Ider = -I------I---D-------- × 100% D ( 25 °C ) Fig 2. Normalized continuous drain current as a function of mounting base temperature. 103 03nc66 ID (A) RDSon = VDS/ ID 102 tp = 10 us 10 P δ = tp T tp T.


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