level FET. BUK7520-55A Datasheet

BUK7520-55A FET. Datasheet pdf. Equivalent

BUK7520-55A Datasheet
Recommendation BUK7520-55A Datasheet
Part BUK7520-55A
Description standard level FET
Feature BUK7520-55A; BUK7520-55A; BUK7620-55A TrenchMOS™ standard level FET Rev. 01 — 18 January 2001 Product specificat.
Manufacture Philips
Datasheet
Download BUK7520-55A Datasheet




Philips BUK7520-55A
BUK7520-55A; BUK7620-55A
TrenchMOS™ standard level FET
Rev. 01 — 18 January 2001
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7520-55A in SOT78 (TO-220AB)
BUK7620-55A in SOT404 (D 2-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
c
c x 12 V and 24 V loads
x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
connected to drain (d)
mb
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
Symbol
d
g
MBB076
s



Philips BUK7520-55A
Philips Semiconductors
BUK7520-55A; BUK7620-55A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
VGS = 10 V; ID = 25 A
Tj = 25 °C
Tj = 175 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 k
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
IDM peak drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
Tmb = 25 °C; Figure 1
IDR reverse drain current (DC)
IDRM
pulsed reverse drain current
Avalanche ruggedness
Tmb = 25 °C
Tmb = 25 °C; pulsed; tp 10 µs
WDSS non-repetitive avalanche energy
unclamped inductive load; ID = 48 A;
VDS 55 V; VGS = 10 V; RGS = 50 ;
starting Tmb = 25 °C
Typ Max Unit
55 V
54 A
118 W
175 °C
17 20 m
40 m
Min Max Unit
55 V
55 V
− ±20 V
54 A
38 A
217 A
118 W
55 +175 °C
55 +175 °C
54 A
217 A
115 mJ
9397 750 07751
Product specification
Rev. 01 — 18 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
2 of 15



Philips BUK7520-55A
Philips Semiconductors
BUK7520-55A; BUK7620-55A
TrenchMOS™ standard level FET
120
Pder (%)
100
03na19
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
Pder
=
-------P----t--o--t-------
P
×
100
%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
Ider
(%)
100
03aa24
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
VGS 4.5 V
Ider = -I------I---D-------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103 03nc66
ID
(A)
RDSon = VDS/ ID
102
tp = 10 us
10 P
δ
=
tp
T
tp
T
1
1
t
D.C.
10
100 us
1 ms
10 ms
100 ms
VDS (V)
102
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07751
Product specification
Rev. 01 — 18 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
3 of 15







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