Power Transistor. IPI60R099CPA Datasheet

IPI60R099CPA Transistor. Datasheet pdf. Equivalent

IPI60R099CPA Datasheet
Recommendation IPI60R099CPA Datasheet
Part IPI60R099CPA
Description Power Transistor
Feature IPI60R099CPA; CoolMOSTM Power Transistor Features • Worldwide best Rds,on in TO262 • Ultra low gate charge • Extre.
Manufacture Infineon Technologies
Datasheet
Download IPI60R099CPA Datasheet




Infineon Technologies IPI60R099CPA
CoolMOSTM Power Transistor
Features
• Worldwide best Rds,on in TO262
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Product Summary
V DS
R DS(on),max
Q g,typ
IPI60R099CPA
600 V
0.105
60 nC
PG-TO262-3-1
Type
IPI60R099CPA
Package
Marking
PG-TO262-3-1 6R099A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current1)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1),2)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating temperature
Tj
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
static
T C=25 °C
Storage temperature
T stg
Value
31
19
93
800
1.2
11
50
±20
255
-40 … 150
-40 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
Rev. 2.1
page 1
2009-03-25



Infineon Technologies IPI60R099CPA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current1)
Reverse diode dv /dt 3)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPI60R099CPA
Value
18
93
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
-
-
0.5 K/W
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
Soldering temperature,
reflow soldering
MSL1, reflow acc. to
T sold IPC-JEDEC J-STD-
-
020C
Electrical characteristics, at T j=25 °C, unless otherwise specified
-
260 °C
-
245 °C
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=1.2 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=18 A,
T j=25 °C
-
Gate resistance
V GS=10 V, I D=18 A,
T j=150 °C
-
RG
f =1 MHz, open drain
-
-
5 µA
-
100 nA
0.09 0.105
0.24
-
1.3
-
Rev. 2.1
page 2
2009-03-25



Infineon Technologies IPI60R099CPA
IPI60R099CPA
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
C iss
V GS=0 V, V DS=100 V,
-
C oss
f =1 MHz
-
Effective output capacitance, energy
related4)
C o(er)
-
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
related5)
C o(tr)
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
-
tr
V DD=400 V,
-
V GS=10 V, I D=18 A,
t d(off)
R G=3.3
-
tf
-
2800
130
130
340
10
5
60
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
-
Q gd
V DD=400 V, I D=18 A,
-
Qg
V GS=0 to 10 V
-
V plateau
-
14
- nC
20
-
60
80
5.0
-V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=18 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
-
0.9
1.2 V
-
450
- ns
-
12
- µC
-
70
-A
1) Pulse width t p limited by T j,max
2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3) I SDI D, di/dt100A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch
4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.1
page 3
2009-03-25







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