Power MOSFET. SiHFP9140 Datasheet

SiHFP9140 MOSFET. Datasheet pdf. Equivalent


Vishay SiHFP9140
Power MOSFET
IRFP9140, SiHFP9140
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
- 100
VGS = - 10 V
61
Qgs (nC)
14
Qgd (nC)
29
Configuration
Single
0.20
S
TO-247AC
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mouting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
TO-247AC
IRFP9140PbF
SiHFP9140-E3
IRFP9140
SiHFP9140
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 3.3 mH, Rg = 25 Ω, IAS = - 21 A (see fig. 12).
c. ISD - 21 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
LIMIT
- 100
± 20
- 21
- 15
- 84
1.2
960
- 21
18
180
- 5.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHFP9140 Datasheet
Recommendation SiHFP9140 Datasheet
Part SiHFP9140
Description Power MOSFET
Feature SiHFP9140; Power MOSFET IRFP9140, SiHFP9140 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (.
Manufacture Vishay
Datasheet
Download SiHFP9140 Datasheet




Vishay SiHFP9140
IRFP9140, SiHFP9140
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.83
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 μA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 100 V, VGS = 0 V
VDS = - 80 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 13 Ab
VDS = - 50 V, ID = - 13 Ab
- 100
-
- 2.0
-
-
-
-
6.2
-
- 0.087
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.20
-
V
V/°C
V
nA
μA
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 19 A, VDS = - 80 V,
see fig. 6 and 13b
VDD = - 50 V, ID = - 19 A,
Rg = 9.1 Ω, RD = 2.4 Ω, see fig. 10b
-
-
-
-
-
-
-
-
-
-
1400
590
140
-
-
-
16
73
34
57
-
-
-
61
14
29
-
-
-
-
pF
nC
ns
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 5.0 -
nH
- 13 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - - 21
A
- - - 84
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 21 A, VGS = 0 Vb
-
-
- 5.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μsb
-
130 260 ns
Qrr - 0.35 0.70 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiHFP9140
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFP9140, SiHFP9140
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91238
S11-0444-Rev. B, 14-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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