Document
Power MOSFET
IRF634, SiHF634
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
41 6.5 22 Single
0.45
D
TO-220AB
G
S D G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRF634PbF SiHF634-E3 IRF634 SiHF634
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 7.3 mH, Rg = 25 , IAS = 8.1 A (see fig. 12). c. ISD 8.1 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
LIMIT 250 ± 20 8.1 5.1 32 0.59 300 8.1 7.4 74 4.8
- 55 to + 150 300d 10 1.1
UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91034 S11-0509-B, 21-Mar-11
www.vishay.com 1
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF634, SiHF634
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface
RthJA RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP. -
0.50 -
MAX. 62 1.7
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5.1 Ab
VDS = 50 V, ID = 5.1 Ab
250 -
-V
- 0.37 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
-
-
0.45
1.6 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 5.6 A, VDS = 200 V, see fig. 6 and 13b
VDD = 125 V, ID = 5.6 A, Rg = 12 , RD = 22, see fig. 10b
-
770 190 - pF 52 -
- 41 - 6.5 nC - 22 9.6 21 -
ns 42 19 -
Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics
LD LS
Between lead, 6 mm (0.25") from package and center of die contact
D
G S
- 4.5 nH
- 7.5 -
Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta
IS
MOSFET symbol showing the
integral reverse
ISM p - n junction diode
D
G S
- - 8.1 A
- - 32
Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time
VSD
TJ = 25 °C, IS = 8.1 A, VGS = 0 Vb
- - 2.0 V
trr
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb
-
220 440 ns
Qrr - 1.2 2.4 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com 2
Document Number: 91034 S11-0509-B, 21-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF634, SiHF634
Vishay Siliconix
ID, Drain Current (A)
VGS
Top 15 V
10 V
101
8.0 V 7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100 4.5 V
10-1
91034_01
20 µs Pulse Width TC = 25 °C 100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
.