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SiHF644S Dataheets PDF



Part Number SiHF644S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SiHF644S DatasheetSiHF644S Datasheet (PDF)

Power MOSFET IRF644S, SiHF644S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 68 11 35 Single 0.28 D2PAK (TO-263) K D G DS G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTIO.

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Power MOSFET IRF644S, SiHF644S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 68 11 35 Single 0.28 D2PAK (TO-263) K D G DS G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF644S-GE3 IRF644SPbF SiHF644S-E3 D2PAK (TO-263) SiHF644STRL-GE3a IRF644STRLPbFa SiHF644STL-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 , IAS = 14 A (see fig. 12). c. ISD  14 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). D2PAK (TO-263) SiHF644STRR-GE3a IRF644STRRPbFa SiHF644STR-E3a LIMIT 250 ± 20 14 8.5 56 1.0 0.025 550 14 13 125 3.1 4.8 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91040 S11-1047-Rev. C, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF644S, SiHF644S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a RthJA RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). TYP. - MAX. 62 40 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 8.4 Ab VDS = 50 V, ID = 8.4 Ab 250 - -V - 0.34 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 μA - - 250 - - 0.28  6.7 - -S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1300 - 330 - 85 - pF VGS = 10 V ID = 7.9 A, VDS = 200 V, see fig. 6 and 13b - - 68 - 11 nC - 35 - 11 - VDD = 125 V, ID = 7.9 A, Rg = 9.1 , RD = 8.7 , see fig. 10b - 24 ns - 53 - - 49 - Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics LD LS Between lead, 6 mm (0.25") from package and center of die contact D G S - 4.5 nH - 7.5 - Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse Pulsed Diode Forward Currenta ISM p - n junction diode D G S - - 14 A - - 56 Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time VSD TJ = 25 °C, IS = 14 A, VGS = 0 Vb - - 1.8 V trr - 250 500 ns TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μsb Qrr - 2.3 4.6 μC ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com 2 Docume.


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