Document
Power MOSFET
IRF644S, SiHF644S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
68 11 35 Single
0.28
D2PAK (TO-263) K
D G
DS G
S N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
D2PAK (TO-263)
SiHF644S-GE3 IRF644SPbF SiHF644S-E3
D2PAK (TO-263)
SiHF644STRL-GE3a IRF644STRLPbFa SiHF644STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 , IAS = 14 A (see fig. 12). c. ISD 14 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
D2PAK (TO-263)
SiHF644STRR-GE3a IRF644STRRPbFa SiHF644STR-E3a
LIMIT
250 ± 20 14 8.5 56 1.0 0.025 550 14 13 125 3.1 4.8 - 55 to + 150 300d
UNIT V
A
W/°C mJ A mJ W V/ns °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91040 S11-1047-Rev. C, 30-May-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644S, SiHF644S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB Mount)a
RthJA RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP. -
MAX. 62 40 1.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 8.4 Ab
VDS = 50 V, ID = 8.4 Ab
250 -
-V
- 0.34 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
- - 0.28
6.7 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
- 1300 - 330 - 85 -
pF
VGS = 10 V
ID = 7.9 A, VDS = 200 V, see fig. 6 and 13b
-
- 68 - 11 nC - 35
- 11 -
VDD = 125 V, ID = 7.9 A, Rg = 9.1 , RD = 8.7 , see fig. 10b
- 24 ns
- 53 -
- 49 -
Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics
LD LS
Between lead, 6 mm (0.25") from package and center of die contact
D
G S
- 4.5 nH
- 7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G S
- - 14 A
- - 56
Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
- - 1.8 V
trr
- 250 500 ns TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μsb
Qrr - 2.3 4.6 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %.
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