Power MOSFET. SiHF720L Datasheet

SiHF720L MOSFET. Datasheet pdf. Equivalent

SiHF720L Datasheet
Recommendation SiHF720L Datasheet
Part SiHF720L
Description Power MOSFET
Feature SiHF720L; www.vishay.com IRF720S, SiHF720S, IRF720L, SiHF720L Vishay Siliconix Power MOSFET PRODUCT SUMMARY.
Manufacture Vishay
Datasheet
Download SiHF720L Datasheet




Vishay SiHF720L
www.vishay.com
IRF720S, SiHF720S, IRF720L, SiHF720L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
400
VGS = 10 V
20
3.3
11
Single
1.8
I2PAK (TO-262)
D2PAK (TO-263)
D
G
SD
D
G
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• Fast switching
• Ease of paralleling
• Simple drive requirements
Available
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF720S-GE3
IRF720SPbF
D2PAK (TO-263)
SiHF720STRR-GE3 a
IRF720STRRPbF a
D2PAK (TO-263)
SiHF720STRL-GE3 a
IRF720STRLPbF
I2PAK (TO-262)
SiHF720L-GE3
IRF720LPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
EAS
IAR
EAR
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 30 mH, Rg = 25 , IAS = 3.3 A (see fig. 12).
c. ISD 3.3 A, dI/dt 65 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
400
± 20
3.3
2.1
13
0.40
0.025
190
3.3
5.0
50
3.1
4.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-1659-Rev. E, 20-Jul-15
1
Document Number: 91044
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiHF720L
www.vishay.com
IRF720S, SiHF720S, IRF720L, SiHF720L
Vishay Siliconix
THEMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.0 Ab
VDS = 50 V, ID = 2.0 Ab
400 -
-V
- 0.51 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 1.8
1.7 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.3 A, VDS = 320 V,
see fig. 6 and 13 b
VDD = 200 V, ID = 3.3 A,
Rg = 18 , RD = 56 , see fig. 10 b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
410 -
120 - pF
47 -
- 20
- 3.3 nC
- 11
10 -
14 -
ns
30 -
13 -
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 3.3
A
- - 13
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 3.3 A, VGS = 0 V b
- - 1.6 V
trr
Qrr
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs b
-
-
270 600 ns
1.4 3.0 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S15-1659-Rev. E, 20-Jul-15
2
Document Number: 91044
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiHF720L
www.vishay.com
IRF720S, SiHF720S, IRF720L, SiHF720L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
101
Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
100 5.5 V
5.0 V
Bottom 4.5 V
10-1 4.5 V
10-2
10-1
91044_01
20 µs Pulse Width
TC = 25 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101 VGS
Top 15 V
10 V
8.0 V
7.0 V
100 6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10-1
4.5 V
10-2
10-1
91044_02
20 µs Pulse Width
TC = 150 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
10
TJ = 25 °C
TJ = 150 °C
1
0.1
0.01
4
VDS = 26.2V
56789
VGS, Gate-to-Source Voltage (V)
10
Fig. 3 - Typical Transfer Characteristics
3.5
ID = 3.3 A
3.0 VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91044_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
1000
800
600
400
200
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
100
91044_05
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 ID = 3.3 A
16 VDS = 320 V
VDS = 200 V
12 VDS = 80 V
8
4
0
0
91044_06
For test circuit
see figure 13
5 10 15 20 25
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-1659-Rev. E, 20-Jul-15
3
Document Number: 91044
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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