Power MOSFET. IRF730AS Datasheet

IRF730AS MOSFET. Datasheet pdf. Equivalent


Vishay IRF730AS
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Max.) ()
Qg (Max.) (nC)
400
VGS = 10 V
22
Qgs (nC)
5.8
Qgd (nC)
9.3
Configuration
Single
1.0
D
I2PAK (TO-262)
D2PAK (TO-263)
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective Coss Specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Sspeed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both US Line Input
Only)
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF730AS-GE3
Lead (Pb)-free
IRF730ASPbF
SiHF730AS-E3
Note
a. See device orientation.
D2PAK (TO-263)
SiHF730ASTRL-GE3a
IRF730ASTRLPbFa
SiHF730ASTL-E3a
D2PAK (TO-263)
SiHF730ASTRR-GE3a
IRF730ASTRRPbFa
SiHF730ASTR-E3a
I2PAK (TO-262)
SiHF730AL-GE3
IRF730ALPbF
SiHF730AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 19 mH, Rg = 25 , IAS = 5.5 A (see fig. 12).
c. ISD 5.5 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF730A, SiHF730A data and test conditions.
LIMIT
400
± 30
5.5
3.5
22
0.6
290
5.5
7.4
74
4.6
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91046
S11-1048-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


IRF730AS Datasheet
Recommendation IRF730AS Datasheet
Part IRF730AS
Description Power MOSFET
Feature IRF730AS; IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS.
Manufacture Vishay
Datasheet
Download IRF730AS Datasheet




Vishay IRF730AS
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.3 Ab
VDS = 50 V, ID = 3.3 Ad
400 -
-V
- 0.5 - V/°C
2.0 - 4.5 V
- - ± 100 nA
- - 25
μA
- - 250
- - 1.0
3.1 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5d
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 320 V, f = 1.0 MHz
VDS = 0 V to 320 Vc, d
VGS = 10 V
ID = 3.5 A, VDS = 320 V,
see fig. 6 and 13b, d
VDD = 200 V, ID = 3.5 A,
Rg = 12 , RD = 57 , see fig. 10b, d
-
-
-
-
-
-
-
-
-
-
-
-
-
600 -
103 - pF
4.0 -
890 -
30 -
45 -
- 22
- 5.8 nC
- 9.3
10 -
22 -
ns
20 -
16 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 5.5
A
- - 22
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 5.5 A, VGS = 0 Vb
- - 1.6 V
trr
TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μsb, d
-
370 550 ns
Qrr - 1.6 2.4 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
d. Uses IRF730A, SiHF730A data and test conditions.
www.vishay.com
2
Document Number: 91046
S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF730AS
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
102 VGS
Top 15 V
10 V
8.0 V
10 7.0 V
6.0 V
5.5 V
5.0 V
1 Bottom 4.5 V
0.1
10-2
0.1
91046_01
4.5 V
20 µs Pulse Width
TC = 25 °C
1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
102
10 TJ = 150 °C
TJ = 25 °C
1
0.1
4.0
91046_03
20 µs Pulse Width
VDS = 50 V
5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
102
Top
VGS
15 V
10 V
10 8.0 V
7.0 V
6.0 V
5.5 V
1 5.0 V
Bottom 4.5 V
4.5 V
0.1
10-2
0.1
20 µs Pulse Width
TC = 150 °C
1 10
102
91046_02
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
2.5
ID = 5.5 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91046_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91046
S11-1048-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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