IRF730AS

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) 400 VGS = 10 V 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration Single 1.0 D I2PAK (TO-262) D2PAK (TO-263) G DS G D S G S N-Channel MOSFET FEATURES Halogen-free According to IEC 61249-2-21 Definition Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Sspeed Power Switching TYPICAL SMPS TOPOLOGIES Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both US Line Input Only) ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF730AS-GE3 Lead (Pb)-free IRF730ASPbF SiHF730AS-E3 Note a. See device orientation. D2PAK (TO-263) SiHF730ASTRL-GE3a IRF730ASTRLPbFa SiHF730ASTL-E3a D2PAK (TO-263) SiHF730ASTRR-GE3a IRF730ASTRRPbFa SiHF730ASTR-E3a I2PAK (TO-262) SiHF730AL-GE3 IRF730ALPbF SiHF730AL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Dio...