www.vishay.com
IRF820S, SiHF820S, IRF820L, SiHF820L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
24 3.3 13 Single
I2PAK (TO-262)
D2PAK (TO-263)
3.0 D
G
DS G
D S
G
S N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
Available
• Repetitive avalanche rated
• Fast switching
Available
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free Lead (Pb)-free
Note a. See device orientation.
D2PAK (TO-263) SiHF820S-GE3 IRF820SPbF
D2PAK (TO-263) SiHF820STRL-GE3 a IRF820STRLPbF a
D2PAK (TO-263) SiHF820STRR-GE3 a IRF820STRRPbF a
I2PAK (TO-262) SiHF820L-GE3 IRF820LPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a Linear Derating Factor Linear Derating Factor (PCB mount) e Single Pulse Avalanche Energy b Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB mount) e Peak Diode Recovery dV/dt c
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD
dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 60 mH, Rg = 25 , IAS = 2.5 A (see fig. 12). c. ISD 2.5 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT 500 ± 20 2.5 1.6 8.0 0.40 0.025 210 2.5 5.0 50 3.1 3.5
-55 to +150 300
UNIT V
A
W/°C mJ A mJ W V/ns °C
S15-1659-Rev. D, 20-Jul-15
1
Document Number: 91060
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRF820S, SiHF820S, IRF820L, SiHF820L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB mount) a
RthJA RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP. -
MAX. 62 40 2.5
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.5 Ab
VDS = 50 V, ID = 1.5 Ab
500 -
-V
- 0.59 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
- - 3.0
1.5 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Internal Drain Inductance
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
LD
Internal Source Inductance Drain-Source Body Diode Characteristics
LS
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 2.1 A, VDS = 400 V, see fig. 6 and 13b
VDD = 250 V, ID = 2.1 A, Rg = 18 , RD = 100 , see fig. 10b
Between lead, 6 mm (0.25") from package and center of die contact
D
G S
-
-
-
360 92 - pF 37 - 24 - 3.3 nC - 13 8.0 8.6 -
ns 33 16 -
4.5 nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
Pulsed Diode Forward Currenta
integral reverse ISM p - n junction diode
D
G S
- - 2.5 A
- - 8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb
- - 1.6 V
Body Diode Reverse Recovery Time Body Diode Re.