DatasheetsPDF.com

SiHF820S Dataheets PDF



Part Number SiHF820S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SiHF820S DatasheetSiHF820S Datasheet (PDF)

www.vishay.com IRF820S, SiHF820S, IRF820L, SiHF820L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 3.3 13 Single I2PAK (TO-262) D2PAK (TO-263) 3.0 D G DS G D S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating Available • Repetitive avalanche rated • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categori.

  SiHF820S   SiHF820S


Document
www.vishay.com IRF820S, SiHF820S, IRF820L, SiHF820L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 3.3 13 Single I2PAK (TO-262) D2PAK (TO-263) 3.0 D G DS G D S G S N-Channel MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating Available • Repetitive avalanche rated • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF820S-GE3 IRF820SPbF D2PAK (TO-263) SiHF820STRL-GE3 a IRF820STRLPbF a D2PAK (TO-263) SiHF820STRR-GE3 a IRF820STRRPbF a I2PAK (TO-262) SiHF820L-GE3 IRF820LPbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor Linear Derating Factor (PCB mount) e Single Pulse Avalanche Energy b Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Maximum Power Dissipation (PCB mount) e Peak Diode Recovery dV/dt c VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 60 mH, Rg = 25 , IAS = 2.5 A (see fig. 12). c. ISD  2.5 A, dI/dt  50 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 500 ± 20 2.5 1.6 8.0 0.40 0.025 210 2.5 5.0 50 3.1 3.5 -55 to +150 300 UNIT V A W/°C mJ A mJ W V/ns °C S15-1659-Rev. D, 20-Jul-15 1 Document Number: 91060 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRF820S, SiHF820S, IRF820L, SiHF820L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Ambient  (PCB mount) a RthJA RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). TYP. - MAX. 62 40 2.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 1.5 Ab VDS = 50 V, ID = 1.5 Ab 500 - -V - 0.59 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 μA - - 250 - - 3.0  1.5 - -S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD Internal Source Inductance Drain-Source Body Diode Characteristics LS VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 2.1 A, VDS = 400 V, see fig. 6 and 13b VDD = 250 V, ID = 2.1 A, Rg = 18 , RD = 100 , see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact D G S - - - 360 92 - pF 37 - 24 - 3.3 nC - 13 8.0 8.6 - ns 33 16 - 4.5 nH 7.5 - Continuous Source-Drain Diode Current IS MOSFET symbol showing the  Pulsed Diode Forward Currenta integral reverse ISM p - n junction diode D G S - - 2.5 A - - 8.0 Body Diode Voltage VSD TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb - - 1.6 V Body Diode Reverse Recovery Time Body Diode Re.


IRF820S SiHF820S IRF820L


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)