Power MOSFET. IRF820AL Datasheet

IRF820AL MOSFET. Datasheet pdf. Equivalent

IRF820AL Datasheet
Recommendation IRF820AL Datasheet
Part IRF820AL
Description Power MOSFET
Feature IRF820AL; IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS.
Manufacture Vishay
Datasheet
Download IRF820AL Datasheet




Vishay IRF820AL
IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Max.) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
17
4.3
8.5
Single
I2PAK (TO-262)
D2PAK (TO-263)
3.0
D
G
SD
D
G
S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
G
S
N-Channel MOSFET
D2PAK (TO-263)
SiHF820AS-GE3
IRF820ASPbF
SiHF820AS-E3
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche
Voltage and Current
• Effective Coss specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge and Full Bridge
I2PAK (TO-262)
SiHF820AL-GE3
IRF820ALPbF
SiHF820AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 45 mH, Rg = 25 , IAS = 2.5 A (see fig. 12).
c. ISD 2.5 A, dI/dt 270 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF820A, SiHF820A data and test conditions.
LIMIT
500
± 30
2.5
1.6
10
0.4
140
2.5
5.0
50
3.4
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91058
S11-1049-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF820AL
IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
62
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.5 Ab
VDS = 50 V, ID = 1.5 Ad
500 -
-V
- 0.60 - V/°C
2.0 - 4.5 V
- - ± 100 nA
- - 25
μA
- - 250
- - 3.0
1.4 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5d
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc, d
VGS = 10 V
ID = 2.5 A, VDS = 400 V,
see fig. 6 and 13b, d
VDD = 250 V, ID = 2.5 A,
Rg = 21 , RD = 97 , see fig. 10b, d
-
-
-
-
-
-
-
-
-
-
-
-
-
340 -
53 - pF
2.7 -
490 -
15 -
28 -
- 17
- 4.3 nC
- 8.5
8.1 -
12 -
ns
16 -
13 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 2.5
A
- - 10
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb
- - 1.6 V
trr
TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μsb, d
-
330 500 ns
Qrr - 760 1140 nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
d. Uses IRF820A/SiHF820A data and test conditions.
www.vishay.com
2
Document Number: 91058
S11-1049-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF820AL
IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 VGS
Top 15 V
10 V
8.0 V
7.0 V
1 6.0 V
5.5 V
5.0 V
Bottom 4.5 V
0.1
4.5 V
10-2
0.1
20 µs Pulse Width
TJ = 25 °C
1 10 102
91058_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
10
TJ = 150 °C
1
TJ = 25 °C
0.1
20 µs Pulse Width
VDS = 50 V
10-2
4.0 5.0 6.0 7.0 8.0 9.0
91058_03
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10 VGS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
1
5.0 V
Bottom 4.5 V
4.5 V
0.1
1
20 µs Pulse Width
TJ = 150 °C
10 102
91058_02
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
ID = 2.5 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91058_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91058
S11-1049-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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