Document
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
24 6.3 11 Single
1.40
I2PAK (TO-262)
D2PAK (TO-263)
D
G
SD
D G
S
G
S N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Low Gate Charge Qg Results in Simple Drive
Requirement • Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
and Current • Effective Coss specified • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High speed power switching
TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half Bridge and Full Bridge
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
D2PAK (TO-263) SiHF830AS-GE3 IRF830ASPbF SiHF830AS-E3
D2PAK (TO-263) SiHF830ASTRL-GE3a IRF830ASTRLPbFa SiHF830ASTL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C TC = 100 °C
TA = 25 °C TC = 25 °C
VDS VGS
ID IDM
EAS IAR EAR PD
dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 18 mH, Rg = 25 , IAS = 5.0 A (see fig. 12). c. ISD 5.0 A, dI/dt 370 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. Uses SiHF830A data and test conditions.
I2PAK (TO-262) SiHF830AL-GE3a IRF830ALPbF SiHF830AL-E3
LIMIT 500 ± 30 5.0 3.2 20 0.59 230 5.0 7.4 3.1 74 5.3
- 55 to + 150 300d
UNIT V
A
W/°C mJ A mJ W V/ns °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91062 S11-1049-Rev. C, 30-May-11
www.vishay.com 1
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB Mounted, Steady-State)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP. -
MAX. 40 1.7
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
VDS VDS/TJ VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) gfs
Ciss Coss Crss
Output Capacitance
Coss
Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics
Coss eff. Qg Qgs Qgd td(on) tr td(off) tf
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.0 Ab
VDS = 50 V, ID = 3.0 Ad
500 -
-V
- 0.60 - V/°C
2.0 - 4.5 V
- - ± 100 nA
- - 25 μA
- - 250
- - 1.4
2.8 -
-S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5d
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc, d
VGS = 10 V
ID = 5.0 A, VDS = 400 V, see fig. 6 and 13b, d
VDD = 250 V, ID = 5.0 A, Rg = 14 , RD = 49 , see fig. 10b, d
-
620 93 - pF 4.3 886 27 39 - 24 - 6.3 nC - 11 10 21 -
ns 21 15 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
Pulsed Diode Forward Currenta
integral reverse ISM p - n junction diode
D
G S
- - 5.0 A
- - 20
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μsb, d
-
430 650 ns
Qrr - 2.0 3.0 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. d. Uses SiHF830A data and test conditions.
www.vishay.com 2
Document Number: 91062 S11-1049-Rev. C, 30-May-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
.