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IRF830AL Dataheets PDF



Part Number IRF830AL
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRF830AL DatasheetIRF830AL Datasheet (PDF)

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 6.3 11 Single 1.40 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche V.

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IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 6.3 11 Single 1.40 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High speed power switching TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half Bridge and Full Bridge ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF830AS-GE3 IRF830ASPbF SiHF830AS-E3 D2PAK (TO-263) SiHF830ASTRL-GE3a IRF830ASTRLPbFa SiHF830ASTL-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TA = 25 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 18 mH, Rg = 25 , IAS = 5.0 A (see fig. 12). c. ISD  5.0 A, dI/dt  370 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. Uses SiHF830A data and test conditions. I2PAK (TO-262) SiHF830AL-GE3a IRF830ALPbF SiHF830AL-E3 LIMIT 500 ± 30 5.0 3.2 20 0.59 230 5.0 7.4 3.1 74 5.3 - 55 to + 150 300d UNIT V A W/°C mJ A mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91062 S11-1049-Rev. C, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient (PCB Mounted, Steady-State)a RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). TYP. - MAX. 40 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage VDS VDS/TJ VGS(th) IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) gfs Ciss Coss Crss Output Capacitance Coss Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 0, ID = 250 μA Reference to 25 °C, ID = 1 mAd VDS = VGS, ID = 250 μA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 3.0 Ab VDS = 50 V, ID = 3.0 Ad 500 - -V - 0.60 - V/°C 2.0 - 4.5 V - - ± 100 nA - - 25 μA - - 250 - - 1.4  2.8 - -S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5d VGS = 0 V VDS = 1.0 V, f = 1.0 MHz VDS = 400 V, f = 1.0 MHz VDS = 0 V to 400 Vc, d VGS = 10 V ID = 5.0 A, VDS = 400 V, see fig. 6 and 13b, d VDD = 250 V, ID = 5.0 A, Rg = 14 , RD = 49 , see fig. 10b, d - 620 93 - pF 4.3 886 27 39 - 24 - 6.3 nC - 11 10 21 - ns 21 15 - Continuous Source-Drain Diode Current IS MOSFET symbol showing the Pulsed Diode Forward Currenta integral reverse ISM p - n junction diode D G S - - 5.0 A - - 20 Body Diode Voltage VSD TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb - - 1.5 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μsb, d - 430 650 ns Qrr - 2.0 3.0 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. d. Uses SiHF830A data and test conditions. www.vishay.com 2 Document Number: 91062 S11-1049-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 .


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