Power MOSFET. IRF840S Datasheet

IRF840S MOSFET. Datasheet pdf. Equivalent


Vishay IRF840S
www.vishay.com
IRF840S, SiHF840S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
63
9.3
32
Single
0.85
D
D2PAK (TO-263)
G
GD
S
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• Fast switching
• Ease of paralleling
• Simple drive requirement
Available
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF840S-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRF840SPbF
SiHF840S-E3
D2PAK (TO-263)
SiHF840STRL-GE3 a
IRF840STRLPbF a
SiHF840STL-E3 a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
Linear Derating Factor (PCB mount) e
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
D2PAK (TO-263)
SiHF840STRR-GE3 a
IRF840STRRPbF a
SiHF840STR-E3 a
LIMIT
500
± 20
8.0
5.1
32
1.0
0.025
510
8.0
13
125
3.1
3.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S16-0754-Rev. D, 02-May-16
1
Document Number: 91071
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


IRF840S Datasheet
Recommendation IRF840S Datasheet
Part IRF840S
Description Power MOSFET
Feature IRF840S; www.vishay.com IRF840S, SiHF840S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (.
Manufacture Vishay
Datasheet
Download IRF840S Datasheet




Vishay IRF840S
www.vishay.com
IRF840S, SiHF840S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.8 A b
VDS = 50 V, ID = 4.8 A b
500
-
-
V
-
0.78
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.85
4.9
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1300
-
-
310
-
pF
-
120
-
-
VGS = 10 V
ID = 8.0 A, VDS = 400 V,
see fig. 6 and 13 b
-
-
-
63
-
9.3
nC
-
32
-
14
-
VDD = 250 V, ID = 8.0 A,
Rg = 9.1 , RD = 31 , see fig. 10b
-
23
-
ns
-
49
-
-
20
-
Internal Drain Inductance
LD
Internal Source Inductance
LS
Gate Input Resistance
Rg
Drain-Source Body Diode Characteristics
Between lead,
D
6 mm (0.25") from
package and center of
G
die contact
S
f = 1 MHz, open drain
-
4.5
-
nH
-
7.5
-
0.6
-
2.8
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Current a
ISM
p - n junction diode
D
G
S
-
-
8.0
A
-
-
32
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 8.0 A, VGS = 0 V b
-
-
2.0
V
trr
Qrr
-
TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs b
-
460
970
ns
4.2
8.9
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S16-0754-Rev. D, 02-May-16
2
Document Number: 91071
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF840S
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF840S, SiHF840S
Vishay Siliconix
VGS
Top 15 V
10 V
8.0 V
101
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
100
91071_01
4.5 V
20 µs Pulse Width
TC = 25 °C
101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
VGS
Top 15 V
101
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
100
100
91071_02
20 µs Pulse Width
TC = 150 °C
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
150 °C
101
25 °C
100
4
91071_03
20 µs Pulse Width
VDS = 50 V
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
ID = 8.0 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91071_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
2500
2000
1500
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
Coss
Crss
0
100
91071_05
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 8.0 A
16
VDS = 400 V
VDS = 250 V
12
VDS = 100 V
8
4
0
0
91071_06
For test circuit
see figure 13
15
30
45
60
75
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0754-Rev. D, 02-May-16
3
Document Number: 91071
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)