IRF530S

Power MOSFET IRF530S, SiHF530S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 26 5.5 11 Single 0.16 D2PAK (TO-263) D G GD S S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF530S-GE3 Lead (Pb)-free IRF530SPbF SiHF530S-E3 Note a. See device orientation. FEATURES Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. D2PAK (TO-263) SiHF530STRL-GE3a IRF530STRLPbFa SiHF530STL-E3a D2PAK (TO-263) SiHF530STRR-GE3a IRF530STRRPbFa SiHF530STR-E3a ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Contin...