Power MOSFET. ERF7530 Datasheet

ERF7530 MOSFET. Datasheet pdf. Equivalent

ERF7530 Datasheet
Recommendation ERF7530 Datasheet
Part ERF7530
Description RF Power MOSFET
Feature ERF7530; DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the .
Manufacture EKL Components
Datasheet
Download ERF7530 Datasheet




EKL Components ERF7530
DESCRIPTION
The ERF7530 is a MOSFET transistor
developed for RF power amplifier
applications in the HF frequency range.
High power in a TO-218 package for an
excellent ‘watt per dollar’ value.
FEATURES
• High Power and Economical:
Pout > 20W (75W PEP)
Gp > 10dB @ 12.5V, f=30MHz
• VTH Sorted in 0.2V Steps for Easy
Matching of Parts in Push-Pull and
Parrallel Designs
APPLICATION
Final amplification stages in mobile HF
transceivers and amplifiers.
ERF7530
RF Power MOSFET - 30MHz / 75 Watt PEP
TO-218 PACKAGE OUTLINE & MARKINGS
D
q1
4
E1
1 23
L L1
A
0P F
E
MILLIMETERS
DIM MIN
MAX
A 4.9
5
b1
1.2
C 2.2
2.8
D 14.8 15.2
E 20.1 20.5
E1 12.5
e 5.4
12.7
5.6
F 1.98
2.1
L 14
15
L1 1.5
P4
1.9
4.2
Q 0.5
0.6
q1 4
4.1
bQ
C
e
Pins:
1. Gate
2. Drain
3. Source
4. Drain (Fin)
EKL Logo
Date Code
ERF7530
0830 G
Part Number
VTH Letter Code
(see Electrical Characteristics)
ERF7530
Rev.2.0 MAR 2009
1/6



EKL Components ERF7530
ERF7530
RF Power MOSFET - 30MHz / 75 Watt PEP
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE SPECIFIED)
SYMBOL
PARAMETER
V DSS Drain to source voltage
V GSS Gate to source voltage
Pch Channel dissipation
ID Drain current
Tch Channel temperature
Tstg Storage temperature
Rth j-c
Thermal resistance
CONDITIONS
Vgs = 0V
Vds = 0V
Tc=25°C
junction to case
RATINGS
50
+/- 20
120
15
150
-40 to +150
1.2
UNIT
V
V
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS
(Tc=25°C UNLESS OTHERWISE SPECIFIED)
SYMBOL
PARAMETER
IDSS Zero gate voltage drain current
V TH Gate threshold voltage
ERF7530A
ERF7530B
ERF7530C
ERF7530D
ERF7530E
ERF7530F
ERF7530G
ERF7530H
ERF7530I
ERF7530J
Pout
Output Power
CONDITIONS
V DS = 50V, VGS = 0V
V DS = 12V, IDS = 250μA
V DD = 12.5V, Pin=7.5W
f=30MHz
NOTE: Above parameters, specifications, ratings, limits and conditions are subject to change.
MIN
-
2
2.000
2.200
2.400
2.600
2.800
3.000
3.200
3.400
3.600
3.800
75
TYP
-
-
-
-
-
-
-
-
-
-
-
-
90
MAX
500
4
2.199
2.399
2.599
2.799
2.999
3.199
3.399
3.599
3.799
4.000
UNIT
μA
V
V
V
V
V
V
V
V
V
V
V
W
ERF7530
Rev.2.0 MAR 2009
2/6



EKL Components ERF7530
TEST CIRCUIT (f=30MHz)
ERF7530
RF Power MOSFET - 30MHz / 75 Watt PEP
8 VOLT TRANSMIT
C1 VR1
.01 10K POT
P IN 1 1
0
C3
820P
R2
6.8K
ERF7530
1
R3
10K C8
.01
L1
2T5
2
2
1
1
C2
1000P
L5
6T5
C9
470UF
C4
680P
L2
3T5
2
2
1
1
C5
100P
L3
3T5
2
2
1
1
C6
150P
0 0 0 0 12-15 VDC
0
0
0
L4
8T5
21
1 1 P OUT
C7
100P
0
ERF7530
Rev.2.0 MAR 2009
3/6







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