NPN Transistor. C5174 Datasheet

C5174 Transistor. Datasheet pdf. Equivalent

C5174 Datasheet
Recommendation C5174 Datasheet
Part C5174
Description Silicon NPN Transistor
Feature C5174; TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5174 Power Amplifier Applications Driver Stage Ampl.
Manufacture Toshiba Semiconductor
Datasheet
Download C5174 Datasheet




Toshiba Semiconductor C5174
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5174
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC5174
Unit: mm
High transition frequency: fT = 100 MHz (typ.)
Complementary to 2SA1932
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 230 V
Collector-emitter voltage
VCEO 230 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 1 A
Base current
IB 0.1 A
Collector power dissipation
Junction temperature
Storage temperature range
PC 1.8 W
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10T1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.5 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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Toshiba Semiconductor C5174
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE
fT
Cob
VCB = 230 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 100 mA
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
VCE = 10 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1 MHz
Marking
2SC5174
Min Typ. Max Unit
― ― 1.0 μA
― ― 1.0 μA
230
V
100 320
― ― 1.5 V
― ― 1.0 V
100 MHz
20 pF
C5174
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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Toshiba Semiconductor C5174
IC – VCE
1.0
20
10
8
0.8
6
0.6
4
0.4
IB = 2 mA
0.2
Common emitter
Ta = 25°C
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
2SC5174
IC – VBE
1.0
Common emitter
VCE = 5 V
0.8
0.6
Ta = 100°C 25
25
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
5000
3000
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = 5 V
Ta = 100°C
25 25
10
0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
fT – IC
500
300
100
50
30
Common emitter
10 VCE = 10 V
Ta = 25°C
5
5 10 30 100 300 1000
Collector current IC (mA)
VCE (sat) – IC
5
Common emitter
3 IC/IB = 10
1
0.5
0.3
0.1
0.05
0.03
Ta = 100°C
25
25
0.01
0.003
0.01 0.03 0.1 0.3
Collector current IC (A)
1
3
Safe Operating Area
3
IC max (pulsed)*
1 IC max (continuous)
1 ms*
10 ms*
0.5
0.3
DC operation
Ta = 25°C
100 ms*
0.1
0.05
0.03
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
0.01 linearly with increase in
temperature.
0.005
1
3 5 10
30
VCEO max
50 100
300 500
Collector-emitter voltage VCE (V)
3 2006-11-10







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