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2SC4092. C4092 Datasheet |
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DATA SHEET
SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4092 is an NPN silicon epitaxial transistor designed for low-
noise amplifier at VHF, UHF band.
It is contained in 4 pins mini-mold package which enables high-isolation
gain.
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
−0.3
1.5
+0.2
−0.1
FEATURES
• NF = 1.5 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA
• S21e2 = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
25
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 70
Total Power Dissipation
PT
200
Junction Temperature
Tj
150
Storage Temperature
Tstg −65 to +150
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE 40
Gain Bandwidth Product
fT
6
Output Capacitance
Insertion Power Gain
Cob 0.55
S21e2
9.5
12
Noise Figure
NF 1.5
Maximum Available Gain
MAG
14.5
MAX.
0.1
0.1
200
0.9
3.0
5° 5°
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
UNIT
µA
µA
GHz
pF
dB
dB
dB
TEST CONDITIONS
VCB = 15 V, IE = 0
VEB = 2.0 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA f = 1.0 GHz
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
hFE Classification
Class
R4/RD *
Marking
R4
hFE 40 to 120
R5/RE *
R5
100 to 200
* Old Specification / New Specification
Document No. P10363EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
© 1987
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TYPICAL CHARACTERISTICS (TA = 25 °C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
30
20
10
0.5 1
2 5 10 20
IC-Collector Current-mA
50 70
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
VCE = 10 V
5
2
1
0.5
1
35
10
30
IC-Collector Current-mA
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 MHz
2.0
1.0
0.5
0.2
0.1
1
2 5 10 20 30
VCB-Collector to Base Voltage-V
2
2SC4092
70
50
20
10
5
2
1
0.5
0.5
16
12
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 10 V
0.6 0.7 0.8
VBE-Base to Emitter Voltage-V
0.9
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
f = 1 GHz
8
4
0
0.5 1
2 5 10 20
IC-Collector Current-mA
40
NOISE FIGURE.
COLLECTOR CURRENT
7
VCE = 10 V
f = 1.2 GHz
6
5
4
3
2
1
0
0.5 1
2 5 10 20
IC-Collector Current-mA
50 70
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7
6
5
4
3
2
1
0
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50 Ω
f (MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
S11
0.780
0.709
0.567
0.503
0.486
0.488
0.506
0.520
0.528
0.533
0.556
∠ S11
−39.4
−73.6
−114.4
−143.3
−164.3
−179.5
167.5
159.9
149.8
141.8
134.9
NF, Ga vs.
COLLECTOR CURRENT
VCE = 10 V
f = 1 GHz
Ga 10
5
NF
1 3 5 7 10
IC-Collector Current-mA
0
30
S21
13.956
11.808
7.509
5.678
4.155
3.499
2.830
2.588
2.188
2.092
1.794
∠ S21
155.8
130.8
106.5
93.2
80.6
72.3
63.0
55.3
48.5
41.7
36.0
S12
0.027
0.058
0.081
0.093
0.104
0.117
0.129
0.144
0.155
0.173
0.181
∠ S12
62.9
62.3
42.1
39.0
36.8
37.2
36.6
35.9
37.5
35.7
36.1
VCE = 10 V, IC = 5 mA, ZO = 50 Ω
f (MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
S11
0.534
0.468
0.428
0.435
0.448
0.464
0.480
0.495
0.511
0.517
0.546
∠ S11
−82.1
−121.0
−157.0
−176.6
170.0
161.0
152.1
146.5
138.9
132.7
127.0
S21
25.861
17.231
9.440
6.738
4.823
4.013
3.232
2.945
2.480
2.364
2.024
∠ S21
136.3
110.2
92.4
83.4
73.7
67.2
59.4
52.7
46.9
40.9
35.9
S12
0.021
0.033
0.051
0.069
0.090
0.107
0.127
0.149
0.164
0.187
0.197
∠ S12
34.8
60.5
50.1
57.2
54.6
54.1
53.5
49.6
49.5
45.2
44.3
2SC4092
S22
0.905
0.767
0.542
0.424
0.353
0.301
0.265
0.246
0.217
0.209
0.192
∠ S22
−21.2
−36.3
−50.3
−56.2
−59.3
−63.1
−66.1
−73.4
−79.1
−88.0
−97.8
S22
0.717
0.481
0.297
0.230
0.197
0.164
0.140
0.131
0.104
0.104
0.094
∠ S22
−41.1
−50.5
−57.8
−59.5
−60.9
−66.3
−70.7
−80.5
−91.4
−103.7
−120.7
3
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