Power MOSFET. SiHF610S Datasheet

SiHF610S MOSFET. Datasheet pdf. Equivalent

SiHF610S Datasheet
Recommendation SiHF610S Datasheet
Part SiHF610S
Description Power MOSFET
Feature SiHF610S; www.vishay.com IRF610S, SiHF610S, IRF610L, SiHF610L Vishay Siliconix Power MOSFET PRODUCT SUMMARY.
Manufacture Vishay
Datasheet
Download SiHF610S Datasheet




Vishay SiHF610S
www.vishay.com
IRF610S, SiHF610S, IRF610L, SiHF610L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
8.2
1.8
4.5
Single
1.5
I2PAK (TO-262)
D2PAK (TO-263)
D
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• Fast switching
• Ease of paralleling
Available
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF610S-GE3
IRF610SPbF
D2PAK (TO-263)
SiHF610STRL-GE3 a
IRF610STRLPbF a
D2PAK (TO-263)
SiHF610STRR-GE3 a
IRF610STRRPbF a
I2PAK (TO-262)
SiHF610L-GE3 a
IRF610LPbF a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Linear Derating Factor (PCB mount) e
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
EAS
IAR
EAR
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 8.8 mH, Rg = 25 , IAS = 3.3 A (see fig. 12).
c. ISD 3.3 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
200
± 20
3.3
2.1
10
0.29
0.025
64
3.3
3.6
36
3.0
5.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-1659-Rev. D, 20-Jul-15
1
Document Number: 91024
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiHF610S
www.vishay.com
IRF610S, SiHF610S, IRF610L, SiHF610L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB mount) c
RthJA
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
40
62
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Static
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.0 A b
VDS = 50 V, ID = 2.0 A b
Dynamic
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.3 A, VDS = 160 V
see fig. 6 and 13 b
VDD = 100 V, ID = 3.3 A,
Rg = 24 , RD = 30 
see fig. 10 b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
G
LS die contact
Drain-Source Body Diode Characteristics
D
S
MIN.
200
-
2.0
-
-
-
-
0.80
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.30 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
- 1.5
- -S
140 -
53 - pF
15 -
- 8.2
- 1.8 nC
- 4.5
8.2 -
17 -
ns
14 -
8.9 -
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current IS MOSFET symbol
D - - 3.3
showing the
integral reverse
G
A
Pulsed Diode Forward Current a
ISM p - n junction diode
S - - 10
Body Diode Voltage
VSD TJ = 25 °C, IS = 3.3 A, VGS = 0 V b - - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 3.3 A,
dI/dt = 100 A/μs b
- 150 310 ns
- 0.60 1.4 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 or G-10 material).
S15-1659-Rev. D, 20-Jul-15
2
Document Number: 91024
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiHF610S
www.vishay.com
IRF610S, SiHF610S, IRF610L, SiHF610L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
101 VGS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
100
5.5 V
5.0 V
Bottom 4.5 V
10-1
10-1
91024_01
4.5 V
20 µs Pulse Width
TC = 25 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
VGS
Top 15 V
10 V
8.0 V
7.0 V
100 6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
10-1
10-1
91024_02
20 µs Pulse Width
TC = 150 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
100
10-1
10-2
91024_03
4
20 µs Pulse Width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.5 ID = 3.3 A
3.0 VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91024_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
300
250
200
150
100
50
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
100
91024_05
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 3.3 A
16 VDS = 160 V
VDS = 100 V
12 VDS = 40 V
8
4
0
0
91024_06
For test circuit
see figure 13
2 4 6 8 10
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-1659-Rev. D, 20-Jul-15
3
Document Number: 91024
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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