Power MOSFET. IRF640S Datasheet

IRF640S MOSFET. Datasheet pdf. Equivalent

IRF640S Datasheet
Recommendation IRF640S Datasheet
Part IRF640S
Description Power MOSFET
Feature IRF640S; www.vishay.com IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET PRODUCT SUMMARY.
Manufacture Vishay
Datasheet
Download IRF640S Datasheet




Vishay IRF640S
www.vishay.com
IRF640S, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
70
13
39
Single
0.18
I2PAK (TO-262)
D2PAK (TO-263)
D
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Low-profile through-hole
• Available in tape and reel
Available
• Dynamic dV/dt rating
• 150 °C operating temperature
Available
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the last lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (SiHF640L) is available for low-profile
applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF640S-GE3
Lead (Pb)-free
IRF640SPbF
Note
a. See device orientation.
D2PAK (TO-263)
SiHF640STRL-GE3 a
IRF640STRLPbF a
D2PAK (TO-263)
SiHF640STRR-GE3 a
IRF640STRRPbF a
I2PAK (TO-262)
SiHF640L-GE3
-
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a, e
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b, e
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c, e
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12).
c. ISD 18 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF640, SiHF640 data and test conditions.
LIMIT
200
± 20
18
11
72
1.0
580
18
13
130
3.1
5.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S16-0014-Rev. E, 18-Jan-16
1
Document Number: 91037
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF640S
www.vishay.com
IRF640S, SiHF640S, SiHF640L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB mounted, steady-state) a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA c
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 11 A b
VDS = 50 V, ID = 11 A d
200 -
-V
- 0.29 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.18
6.7 -
-S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5 d
VGS = 10 V
ID = 18 A, VDS = 160 V,
see fig. 6 and 13 b, c
VDD = 100 V, ID = 18 A,
Rg = 9.1 , RD = 5.4 , see fig. 10 b, c
f = 1 MHz, open drain
- 1300 -
- 430 -
- 130 -
- - 70
- - 13
- - 39
- 14 -
- 51 -
- 45 -
- 36 -
0.5 - 3.6
pF
nC
ns
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current a
integral reverse
ISM p - n junction diode
D
G
S
- - 18
A
- - 72
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 18 A, VGS = 0 V b
- - 2.0 V
trr
Qrr
TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs b, c
-
-
300 610 ns
3.4 7.1 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRF640/SiHF640 data and test conditions.
S16-0014-Rev. E, 18-Jan-16
2
Document Number: 91037
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF640S
www.vishay.com
IRF640S, SiHF640S, SiHF640L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VGS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
101 5.5 V
5.0 V
Bottom 4.5 V
100
10-1
91037_01
4.5 V
20 µs Pulse Width
TC = 25 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TJ = 25 °C
VGS
Top 15 V
10 V
8.0 V
7.0 V
101 6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
100
10-1
91037_02
20 µs Pulse Width
TC = 150 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TJ = 175 °C
150 °C
101
25 °C
100
10-1
4
91037_03
20 µs Pulse Width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0 ID = 18 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91037_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
3000
2500
2000
1500
1000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
500 Crss
0
100
91037_05
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 ID = 18 A
16
12
VDS = 160 V
VDS = 100 V
VDS = 40 V
8
4
0
0
91037_06
For test circuit
see figure 13
15 30 45 60 75
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0014-Rev. E, 18-Jan-16
3
Document Number: 91037
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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