Power MOSFET. IRF740AL Datasheet

IRF740AL MOSFET. Datasheet pdf. Equivalent


Vishay IRF740AL
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
400
VGS = 10 V
36
9.9
16
Single
I2PAK (TO-262)
D2PAK (TO-263)
0.55
D
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective Coss specified
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback Xfmr. Reset
• Single Transistor Forward Xfmr. Reset (Both for US Line
Input Only)
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF740AS-GE3
Lead (Pb)-free
IRF740ASPbF
SiHF740AS-E3
Note
a. See device orientation.
D2PAK (TO-263)
SiHF740ASTRL-GE3a
IRF740ASTRLPbFa
SiHF740ASTL-E3a
D2PAK (TO-263)
SiHF740ASTRR-GE3a
IRF740ASTRRPbFa
SiHF740ASTR-E3a
I2PAK (TO-262)
SiHF740AL-GE3
IRF740ALPbF
SiHF740AL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TA = 25 °C
TC = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 12.6 mH, Rg = 25 , IAS = 10 A (see fig. 12).
c. ISD 10 A, dI/dt 330 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF740A, SiHF740A data and test conditions.
LIMIT
400
± 30
10
6.3
40
1.0
630
10
12.5
3.1
125
5.9
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91052
S11-1048-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


IRF740AL Datasheet
Recommendation IRF740AL Datasheet
Part IRF740AL
Description Power MOSFET
Feature IRF740AL; IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS.
Manufacture Vishay
Datasheet
Download IRF740AL Datasheet




Vishay IRF740AL
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, Steady-State)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6.0 Ab
VDS = 50 V, ID = 6.0 Ad
400 -
-V
- 0.48 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.55
4.9 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5d
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 320 V, f = 1.0 MHz
VDS = 0 V to 320 Vc, d
VGS = 10 V
ID = 10 A, VDS = 320 V,
see fig. 6 and 13b, d
VDD = 200 V, ID = 10 A,
Rg = 10 , RD = 19.5 , see fig. 10b, d
-
-
-
-
-
-
-
-
-
-
-
-
-
1030
170
7.7
1490
52
61
-
-
-
10
35
24
22
-
-
-
-
-
-
36
9.9
16
-
-
-
-
pF
nC
ns
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 10
A
- - 40
Body Diode Voltage
VSD
TJ = 25 °C, IS = 10 A, VGS = 0 Vb
- - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb, d
-
240 360 ns
Qrr - 1.9 2.9 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses IRF740A, SiHF740A data and test conditions.
www.vishay.com
2
Document Number: 91052
S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRF740AL
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
102 VGS
Top 15 V
10 V
8.0 V
10 7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
0.1 4.5 V
10-2
0.1
20 µs Pulse Width
TJ = 25 °C
1 10 102
91052_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
102
10
TJ = 150 °C
1
TJ = 25 °C
20 µs Pulse Width
0.1 VDS = 50 V
4.0 5.0 6.0 7.0 8.0 9.0 10.0
91052_03
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
102
Top
VGS
15 V
10 V
8.0 V
7.0 V
10 6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
4.5 V
20 µs Pulse Width
0.1 TJ = 150 °C
0.1 1
10 102
91052_02
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
ID = 10 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91052_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91052
S11-1048-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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