Power MOSFET. SiHF840L Datasheet

SiHF840L MOSFET. Datasheet pdf. Equivalent


Vishay SiHF840L
Power MOSFET
IRF840L, SiHF840L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
63
9.3
32
Single
0.85
I2PAK
(TO-262)
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The I2PAK (TO-262) is a power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance.
The I2PAK (TO-262) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W.
I2PAK (TO-262)
SiHF840L-GE3
IRF840LPbF
SiHF840L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
TC = 100 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 20
8.0
5.1
32
1.0
510
8.0
13
125
50
3.5
- 55 to + 150
300d
UNIT
V
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91069
S10-2554-Rev. B, 08-Nov-10
www.vishay.com
1


SiHF840L Datasheet
Recommendation SiHF840L Datasheet
Part SiHF840L
Description Power MOSFET
Feature SiHF840L; Power MOSFET IRF840L, SiHF840L Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC.
Manufacture Vishay
Datasheet
Download SiHF840L Datasheet




Vishay SiHF840L
IRF840L, SiHF840L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.8 Ab
VDS = 50 V, ID = 4.8 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 8 A, VDS = 400 V
see fig. 6 and 13b
VDD = 250 V, ID = 8.0 A
Rg = 9.1 , RD = 31, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
Drain-Source Body Diode Characteristics
MIN.
500
-
2.0
-
-
-
-
4.9
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.78 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
-
0.85
- -S
1300
310
120
-
-
-
14
23
49
20
4.5
-
-
-
63
9.3
32
-
-
-
-
-
7.5 -
pF
nC
ns
nH
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 8.0
A
- - 32
Body Diode Voltage
VSD
TJ = 25 °C, IS = 8 A, VGS = 0 Vb
- - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μsb
-
460 970 ns
Qrr - 4.2 8.9 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91069
S10-2554-Rev. B, 08-Nov-10



Vishay SiHF840L
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF840L, SiHF840L
Vishay Siliconix
VGS
Top 15 V
10 V
8.0 V
101
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
100
91069_01
4.5 V
20 µs Pulse Width
TC = 25 °C
101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
150 °C
101
25 °C
100
91069_03
4
20 µs Pulse Width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
VGS
Top 15 V
101 10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
100
91069_02
100
20 µs Pulse Width
TC = 150 °C
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.0
ID = 8.0 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91069_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91069
S10-2554-Rev. B, 08-Nov-10
www.vishay.com
3







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