Power MOSFET
Power MOSFET
IRF9530S, SiHF9530S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Description
Power MOSFET
IRF9530S, SiHF9530S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 100 VGS = - 10 V
38 6.8 21 Single
0.30
S
D2PAK (TO-263)
G
GD S
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
D2PAK (TO-263) SiHF9530S-GE3 IRF9530SPbF SiHF9530S-E3
FEATURES Halogen-free According to IEC 61249-2-21
Definition
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
P-Channel
175 °C Operating Temperature
Fast Switching
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
D2PAK (TO-263) SiHF9530STRL-GE3a IRF9530STRLPbFa SiHF9530STL-E3a
D2PAK (TO-263) SiHF9530STRR-GE3a IRF9530STRRPbFa SiHF9530STR-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Con...
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