SiHF9610S

www.vishay.com IRF9610S, SiHF9610S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 200 VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) Qgd (nC) 7 4 Configuration Single D2PAK (TO-263) S 3 G GD S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free FEATURES Surface Mount Available in Tape and Reel Dynamic dV/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply. DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. D2PAK (TO-263) SiHF9610S-GE3 SiHF9610STRR-GE3 SiHF9610STRL-GE3 IRF9610SPbF SiHF9610S-E3 IRF9610STRRPbF IRF9610STRLPbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Dr...