Power MOSFET. SiHF9610S Datasheet

SiHF9610S MOSFET. Datasheet pdf. Equivalent


Vishay SiHF9610S
www.vishay.com
IRF9610S, SiHF9610S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 200
VGS = - 10 V
Qg (Max.) (nC)
11
Qgs (nC)
Qgd (nC)
7
4
Configuration
Single
D2PAK (TO-263)
S
3
G
GD
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2 W in a typical surface
mount application.
D2PAK (TO-263)
SiHF9610S-GE3
SiHF9610STRR-GE3
SiHF9610STRL-GE3
IRF9610SPbF
SiHF9610S-E3
IRF9610STRRPbF
IRF9610STRLPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount)d
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)d
Peak Diode Recovery dV/dtb
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
VDS
VGS
ID
IDM
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. ISD - 1.8 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
c. 1.6 mm from case.
d. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 200
± 20
- 1.8
-1
-7
0.16
0.025
20
3
-5
- 55 to + 150
300c
UNIT
V
A
W/°C
W
V/ns
°C
S12-1558-Rev. D, 02-Jul-12
1
Document Number: 91081
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHF9610S Datasheet
Recommendation SiHF9610S Datasheet
Part SiHF9610S
Description Power MOSFET
Feature SiHF9610S; www.vishay.com IRF9610S, SiHF9610S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on).
Manufacture Vishay
Datasheet
Download SiHF9610S Datasheet




Vishay SiHF9610S
www.vishay.com
IRF9610S, SiHF9610S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
6.4
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = - 250 μA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = - 0.90 Ab
VDS = - 50 V, ID = - 0.90 Ab
- 200
-
-2
-
-
-
-
0.90
-
- 0.23
-
-
-
-
-
-
-
-
-4
± 100
- 100
- 500
3
-
V
V/°C
V
nA
μA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = - 25 V,
f = 1 MHz, see fig. 10
VGS = - 10 V
ID = - 3.5 A, VDS = - 160 V,
see fig. 11 and 18b
VDD = - 100 V, ID = - 0.90 A,
RG = 50 , RD = 110 , see fig. 17b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
170 -
50 - pF
15 -
- 11
- 7 nC
-4
8-
15 -
ns
1-
8-
4.5 -
nH
7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - - 1.8
A
- - -7
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = - 1.8 A, VGS = 0 Vb
-
-
- 5.8
V
trr
TJ = 25 °C, IF = - 1.8 A, dI/dt = 100 A/μsb
-
240 360 ns
Qrr - 1.7 2.6 μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width 300 μs; duty cycle 2 %.
S12-1558-Rev. D, 02-Jul-12
2
Document Number: 91081
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiHF9610S
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9610S, SiHF9610S
Vishay Siliconix
- 2.40
- 1.92
VGS = - 10, - 9, - 8, - 7 V
- 2.40
- 1.92
VGS = - 10, - 9, - 8 V
-7V
- 1.44
-6V
- 0.96
- 0.48
-5V
80 µs Pulse Test
-4V
0.00
0
- 10 - 20 - 30 - 40 - 50
91081_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
- 1.44
-6V
- 0.96
- 0.48
-5V
0.00
0
80 µs Pulse Test
-2 -4 -6
-4V
- 8 - 10
91081_03
VDS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
- 2.40
- 1.92
- 1.44
TJ = - 55 °C
TJ = 25 °C
TJ = 125 °C
- 0.96
- 0.48
0.00
0
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
- 2 - 4 - 6 - 8 - 10
91081_02
VGS, Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
102
Operation in this area limited
5 by RDS(on)
2
10
5
100 µs
2
1 1 ms
5
2
0.1
1
2
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
5 10 2
5 102 2
5 103
91081_04
Negative VDS, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
2.0
1.0
0.5 D = 0.5
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.02 0.01
0.01
10-5
2
Single Pulse (Transient
Thermal Impedence)
5 10-4 2
5 10-3 2
5 10-2 2
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Per Unit Base = RthJC = 6.4 °C/W
3. TJM - TC = PDM ZthJC(t)
5 0.1 2
5 1.0 2
5 10
91081_05
t1, Square Wave Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to.Case vs. Pulse Duration
S12-1558-Rev. D, 02-Jul-12
3
Document Number: 91081
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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