Power MOSFET. SiHF9630S Datasheet

SiHF9630S MOSFET. Datasheet pdf. Equivalent


Vishay SiHF9630S
www.vishay.com
IRF9630S, SiHF9630S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
-200
VGS = -10 V
29
5.4
15
Single
0.80
D2PAK (TO-263)
S
G
GD
S
D
P-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• P-channel
• Fast switching
Available
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D2PAK (TO-263)
SiHF9630S-GE3
IRF9630SPbF
SiHF9630S-E3
D2PAK (TO-263)
SiHF9630STRL-GE3 a
IRF9630STRLPbF a
SiHF9630STL-E3 a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
Linear Derating Factor (PCB mount) e
VGS at -10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
-200
± 20
-6.5
-4.0
-26
0.59
0.025
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
500
-6.4
7.4
74
3.0
-5.0
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
-55 to +150
300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12).
c. ISD -6.5 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S16-0754-Rev. D, 02-May-16
1
Document Number: 91085
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


SiHF9630S Datasheet
Recommendation SiHF9630S Datasheet
Part SiHF9630S
Description Power MOSFET
Feature SiHF9630S; www.vishay.com IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on).
Manufacture Vishay
Datasheet
Download SiHF9630S Datasheet




Vishay SiHF9630S
www.vishay.com
IRF9630S, SiHF9630S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Gate Input Resistance
Drain-Source Body Diode Characteristics
LS
Rg
VGS = 0, ID = -250 μA
Reference to 25 °C, ID = -1 mA
VDS = VGS, ID = -250 μA
VGS = ± 20 V
VDS = -200 V, VGS = 0 V
VDS = -160 V, VGS = 0 V, TJ = 125 °C
VGS = -10 V
ID = -3.9 A b
VDS = -50 V, ID = -3.9 A b
-200
-
-2.0
-
-
-
-
2.8
-
-0.24
-
-
-
-
-
-
-
-
-4.0
± 100
- 100
-500
0.80
-
V
V/°C
V
nA
μA
S
VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
- 700 -
- 200 - pF
- 40 -
VGS = -10 V
ID = -6.5 A, VDS = -160 V,
see fig. 6 and 13 b
-
-
-
- 29
- 5.4 nC
- 15
- 12 -
VDD = -100 V, ID = -6.5 A,
Rg = 12 , RD = 15 , see fig. 10 b
- 27 -
ns
- 28 -
- 24 -
Between lead,
6 mm (0.25") from
package and center of
die contact
G
f = 1 MHz, open drain
D
S
- 4.5 -
nH
- 7.5 -
0.6 - 3.7
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Current a
integral reverse
ISM p - n junction diode
D
G
S
- - -6.5
A
- - -26
Body Diode Voltage
VSD
TJ = 25 °C, IS = -6.5 A, VGS = 0 V b
- - -6.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs b
-
-
200 300 ns
1.9 2.9 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S16-0754-Rev. D, 02-May-16
2
Document Number: 91085
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiHF9630S
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9630S, SiHF9630S
Vishay Siliconix
VGS
Top - 15 V
- 10 V
101 - 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
100
- 4.5 V
10-1
10-1
91085_01
20 µs Pulse Width
TC = 25 °C
100 101
- VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
3.0
ID = - 6.5 A
2.5 VGS = - 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91085_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
VGS
Top - 15 V
101 - 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
100
- 4.5 V
10-1
10-1
91085_02
20 µs Pulse Width
TC = 150 °C
100 101
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
1200
1000
800
600
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
400
200
0
100
91085_05
Coss
Crss
101
- VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101
25 °C
150 °C
20
ID = - 6.5 A
16
VDS = - 160 V
VDS = - 100 V
12 VDS = - 40 V
8
100
91085_03
4
20 µs Pulse Width
VDS = - 50 V
5 6 7 8 9 10
- VGS, Gate-to-Source Voltage (V)
4
0
0
91085_06
For test circuit
see figure 13
5 10 15 20 25 30
QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0754-Rev. D, 02-May-16
3
Document Number: 91085
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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