IRFBC40S

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 600 VGS = 10 V 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Single 1.2 D I2PAK (TO-262) D2PAK (TO-263) G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBC40S-GE3 Lead (Pb)-free Note a. See device orientation. IRFBC40SPbF SiHFBC40S-E3 FEATURES Halogen-free According to IEC 61249-2-21 Definition Surface Mount (IRFBC40S, SiHFBC40S) Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Available in Tape and Reel (IRFBC40S, SiHFBC40S) Dynamic dV/dt Rating 150 °C Operating Temperature Fast Switching Fully Avalanche Rated Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L, SiHFBC40L) is available for low-profile applications. D2PAK (TO-263) SiHFBC40STRL-GE3a IRFBC40STRLPbFa SiHFBC40S...