Power MOSFET. IRFBF20S Datasheet

IRFBF20S MOSFET. Datasheet pdf. Equivalent

IRFBF20S Datasheet
Recommendation IRFBF20S Datasheet
Part IRFBF20S
Description Power MOSFET
Feature IRFBF20S; IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS.
Manufacture Vishay
Datasheet
Download IRFBF20S Datasheet




Vishay IRFBF20S
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
900
VGS = 10 V
38
Qgs (nC)
4.7
Qgd (nC)
21
Configuration
Single
8.0
D
I2PAK (TO-262) D2PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBF20S, SiHFBF20S)
• Low-Profile Through-Hole (IRFBF20L, SiHFBF20L)
• Available in Tape and Reel (IRFBF20S, SiHFBF20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capabel of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBF20L, SiHFBF20L) is available for
low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFBF20S-GE3
Lead (Pb)-free
Note
IRFBF20SPbF
SiHFBF20S-E3
a. See device orientation.
D2PAK (TO-263)
SiHFBF20STRL-GE3a
IRFBF20STRLPbFa
SiHFBF20STL-E3a
D2PAK (TO-263)
SiHFBF20STRR-GE3a
IRFBF20STRRPbFa
SiHFBF20STR-E3a
I2PAK (TO-262)
SiHFBF20L-GE3
IRFBF20LPbF
SiHFBF20L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltagee
Gate-Source Voltagee
Continuous Drain Current
Pulsed Drain Currenta,e
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb, e
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 117 mH, Rg = 25 , IAS = 1.7 A (see fig. 12).
c. ISD 1.7 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBF20, SiHFBF20 data and test conditions.
LIMIT
900
± 20
1.7
1.1
6.8
0.43
180
1.7
5.4
54
3.1
1.5
- 55 to + 150
300d
10
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
N
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91121
S11-1053-Rev. B, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRFBF20S
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case
RthJC
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
TYP.
-
-
MAX.
40
2.3
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VDS/TJ
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
VDS = 900 V, VGS = 0 V
VDS = 720 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.0 Ab
VDS = 50 V, ID = 1.0 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 1.7 A, VDS = 360 V,
see fig. 6 and 13b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 450 V, ID = 1.7 A,
Rg = 18 , VGS = 10 V, see fig. 10b
Fall Time
tf
MIN.
900
-
2.0
-
-
-
-
0.6
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
TYP. MAX. UNIT
- -V
1.1 - mV/°C
- 4.0 V
- ± 100 nA
- 100
μA
- 500
- 8.0
- -S
490 -
55 - pF
18 -
- 38
- 4.7 nC
- 21
8.0 -
21 -
ns
56 -
32 -
www.vishay.com
2
Document Number: 91121
S11-1053-Rev. B, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay IRFBF20S
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM p - n junction diode
D
G
S
- - 1.7
A
- - 6.8
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb
- - 1.5 V
trr
- 350 530 ns
TJ = 25 °C, IF = 1.7 A, dI/dt = 100 A/μsb
Qrr
-
0.85 1.3
μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFBF20/SiHFBF20 data and test conditions.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91121
S11-1053-Rev. B, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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