IRFL110

www.vishay.com IRFL110, SiHFL110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.3 2.3 3.8 Single 0.54 D SOT-223 D S D G G Marking code: FB S N-Channel MOSFET FEATURES Surface mount Available in tape and reel Dynamic dV/dt rating Repetitive avalanche rated Fast switching Ease of paralleling Simple drive requirements Available Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. SOT-223 SiHFL110-GE3 IRFL110PbF SiHFL110-E3 SOT-223 SiHFL110TR-GE3 a IRFL110TRPbF a SiHFL110T-E3 a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Puls...