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IRGP4069PbF Dataheets PDF



Part Number IRGP4069PbF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP4069PbF DatasheetIRGP4069PbF Datasheet (PDF)

INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package PD - 97426 IRGP4069PbF IRGP4069-EPbF C G E n-channel VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.6V Benefits • High Efficiency in a Wide Range of Applicat.

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INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 5 μS short circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package PD - 97426 IRGP4069PbF IRGP4069-EPbF C G E n-channel VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.6V Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation CC GC E TO-247AC IRGP4069PbF GC E TO-247AD IRGP4069-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V cClamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance RθJC RθCS RθJA Parameter fThermal Resistance Junction-to-Case Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Max. 600 76 50 35 105 140 ±20 ±30 268 134 -55 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. ––– ––– ––– Typ. ––– 0.24 ––– Max. 0.56 ––– 40 Units V A V W °C Units °C/W 1 www.irf.com 10/02/09 IRGP4069PbF/IRGP4069-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 1.3 — — 1.6 1.85 VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 — — 2.0 — VGE(th) Gate Threshold Voltage 4.0 — 6.5 ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -18 — gfe Forward Transconductance — 25 — ICES Collector-to-Emitter Leakage Current — 1.0 20 — 770 — IGES Gate-to-Emitter Leakage Current — — ±100 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Qg Total Gate Charge (turn-on) — 69 104 Qge Gate-to-Emitter Charge (turn-on) — 18 27 Qgc Gate-to-Collector Charge (turn-on) — 29 44 Eon Turn-On Switching Loss — 390 508 Eoff Turn-Off Switching Loss — 632 753 Etotal Total Switching Loss — 1022 1261 td(on) Turn-On delay time — 46 56 tr Rise time — 33 42 td(off) Turn-Off delay time — 105 117 tf Fall time — 44 54 Eon Turn-On Switching Loss — 1013 — Eoff Turn-Off Switching Loss — 929 — Etotal Total Switching Loss — 1942 — td(on) Turn-On delay time — 43 — tr Rise time — 35 — td(off) Turn-Off delay time — 127 — tf Fall time — 61 — Cies Input Capacitance — 2113 — Coes Output Capacitance — 197 — Cres Reverse Transfer Capacitance — 65 — RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area 5 —— Units Conditions eV VGE = 0V, IC = 100μA mV/°C VGE = 0V, IC = 1mA (25°C-175°C) dIC = 35A, VGE = 15V, TJ = 25°C dV IC = 35A, VGE = 15V, TJ = 150°C dIC = 35A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 1.0mA mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) S VCE = 50V, IC = 35A, PW = 60μs μA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C nA VGE = ±20V Units Conditions IC = 35A nC VGE = 15V VCC = 400V IC = 35A, VCC = 400V, VGE = 15V μJ RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 35A, VCC = 400V, VGE = 15V ns RG = 10Ω, L = 200μH, LS = 150nH, TJ = 25°C IC = 35A, VCC = 400V, VGE=15V μJ RG=10Ω, L=200μH, LS=150nH, TJ = 175°C Energy losses include tail & diode reverse recovery IC = 35A, VCC = 400V, VGE = 15V ns RG = 10Ω, L = 200μH, LS = 150nH TJ = 175°C pF VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 140A VCC = 480V, Vp =600V Rg = 10Ω, VGE = +20V to 0V μs VCC = 400V, Vp =600V Rg = 10Ω, VGE = +15V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, L = 19μH, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Rθ is measured at TJ of approximately 90°C. 2 www.irf.com IC (A) 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 Ptot (W) IRGP4069PbF/IRGP4069-EPbF 300 250 200 150 100 50 0 25 50 75 100 125 150 175 TC (°C) Fig. 2 - Power Dissipation vs. Case Temperature 1000 IC (A) 100 100μsec 10μsec 10 1msec DC 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 100 VCE (V) Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 1000 140 VGE = 18V 120 VGE = 15V 100 VGE = 12V VGE.


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