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GP14NC60KD Dataheets PDF



Part Number GP14NC60KD
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STGP14NC60KD
Datasheet GP14NC60KD DatasheetGP14NC60KD Datasheet (PDF)

STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD 14 A, 600 V short-circuit rugged IGBT Datasheet - production data TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-220 3 12 Figure 1: Internal schematic diagram Features  Low on voltage drop (VCE(sat))  Low Cres / Cies ratio (no cross-conduction susceptibility)  Very soft ultrafast recovery antiparallel diode  Short-circuit withstand time 10 μs Applications  High frequency inverters  SMPS and PFC in both hard switch and resonant topologies  Motor driv.

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STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD 14 A, 600 V short-circuit rugged IGBT Datasheet - production data TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-220 3 12 Figure 1: Internal schematic diagram Features  Low on voltage drop (VCE(sat))  Low Cres / Cies ratio (no cross-conduction susceptibility)  Very soft ultrafast recovery antiparallel diode  Short-circuit withstand time 10 μs Applications  High frequency inverters  SMPS and PFC in both hard switch and resonant topologies  Motor drives Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. Order code STGB14NC60KDT4 STGF14NC60KD STGP14NC60KD Table 1: Device summary Marking Package GB14NC60KD D²PAK GF14NC60KD TO-220FP GP14NC60KD TO-220 Packing Tape and reel Tube July 2017 DocID11424 Rev 8 This is information on a product in full production. 1/26 www.st.com Contents Contents STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 7 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 4.1 D2PAK (TO-263) type A package information ................................. 11 4.2 D²PAK (TO-263) type B package information ................................. 14 4.3 D²PAK (TO-263) type A packing information .................................. 17 4.4 D²PAK (TO-263) type B packing information .................................. 19 4.5 TO-220FP package information ...................................................... 21 4.6 TO-220 type A package information................................................ 23 5 Revision history ............................................................................ 25 2/26 DocID11424 Rev 8 STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD Electrical ratings 1 Electrical ratings Symbol VCES IC(1) ICL(2) ICP(3) VGE IF IFSM PTOT VISO tscw Tstg TJ Table 2: Absolute maximum ratings Parameter Value D²PAK, TO-220 TO-220FP Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C 600 25 11 Continuous collector current at TC = 100 °C 14 7 Turn-off latching current 50 Pulsed collector current 50 Gate-emitter voltage ±20 Diode RMS forward current at TC=25°C 20 Surge non repetitive forward current tp = 10 ms sinusoidal 55 Total dissipation at TC = 25 °C 80 28 Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) Short-circuit withstand time VCE = 300 V, Tj = 125 °C, RG = 10 Ω, VGE = 12 V Storage temperature range Operating junction temperature range 2500 10 - 55 to 150 Unit V A A A A V A A W V μs °C Notes: (1)Calculated according to the iterative formula: (2)Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C. (3)Pulse width limited by maximum junction temperature and turn-off within RBSOA. Symbol Rthj-case Rthj-case Rthj-amb Table 3: Thermal data Parameter Value D²PAK, TO-220 TO-220FP Thermal resistance junction-case IGBT 1.56 4.5 Thermal resistance junction-case diode 2.2 5.6 Thermal resistance junction-ambient 62.5 Unit °C/W DocID11424 Rev 8 3/26 Electrical characteristics STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD 2 Electrical characteristics TC = 25 °C unless otherwise specified Symbol Parameter Table 4: Static characteristics Test conditions V(BR)CES Collector-emitter breakdown voltage IC = 1 mA, VGE = 0 V VCE(sat) Collector-emitter saturation voltage VGE(th) Gate threshold voltage ICES Collector cut-off current IGES Gate-emitter leakage current VGE =15 V, IC = 7 A VGE = 15 V, IC = 7 A, Tj= 125 °C VCE = VGE, IC = 250 µA VCE = 600 V, VGE = 0 V VCE=600 V, VGE = 0 V, Tj = 125 °C (1) VCE = 0 V, VGE = ±20 V gfs(2) Forward transconductance VCE = 15 V, IC= 7 A Min. Typ. Max. Unit 600 V 2.1 2.5 V 1.8 4.5 6.5 V 150 µA 1 mA ±100 nA 3.2 S Notes: (1)Defined by design, not subject to production test. (2)Pulsed: Pulse duration = 300 μs, duty cycle 1.5%. Table 5: Dynamic characteristics Symbol Parameter Test conditions Cies Input capacitance Coes Output capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCE = 390 V, IC = 7 A, VGE = 0 to 15 V (see Figure 19: " Gate charge test circuit") Min. Typ. Max. Unit - 760 - - 86 - pF - 15.5 - - 34.4 - - 8.1 - nC - 16.4 - 4/26 DocID11424 Rev 8 STGB14NC60KDT4, STGF14NC60KD, STGP14NC60KD Electrical characteristics Table 6: Switching on.


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