SiHFZ24S

www.vishay.com IRFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single 0.10 D D2PAK (TO-263) G GD S S N-Channel MOSFET FEATURES Advanced process technology Surface mount (IRFZ24S, SiHFZ24S) 175 °C operating temperature Fast switching Available Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 Available Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mo...