Power MOSFET
Power MOSFET
IRL620S, SiHL620S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
200 VGS = 10 V
16...
Description
Power MOSFET
IRL620S, SiHL620S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
200 VGS = 10 V
16
Qgs (nC)
2.9
Qgd (nC)
9.6
Configuration
Single
0.80
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
FEATURES Halogen-free According to IEC 61249-2-21
Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated Logic Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V Fast Switching Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free IRL620STRLPbF
Note a. See device orientation.
D2PAK (TO-263) SiHL620S-GE3 IRL620SPbF SiHL620S-E3
D2PAK (TO-263) SiHL620STRL-GE3a IRL620STRLPbFa SiHL620STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain...
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