Power MOSFET
www.vishay.com
IRLL014, SiHLL014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qg...
Description
www.vishay.com
IRLL014, SiHLL014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 5.0 V
8.4 3.5 6.0 Single
0.20
D
SOT-223 D
S D G
Marking code: LA
G
S N-Channel MOSFET
FEATURES
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Logic-level gate drive
RDS(on) specified at VGS = 4 V and 5 V Fast switching
Available
Ease of paralleling
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
SOT-223 SiHLL014-GE3 IRLL014PbF SiHLL014-E3
SOT-223 SiHLL014TR-GE3 IRLL014TRPbFa SiHLL014T-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pu...
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