SiHL510S

www.vishay.com IRL510S, SiHL510S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 6.1 2.6 3.3 Single 0.54 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) IRL510SPbF FEATURES Surface-mount Available in tape and reel Dynamic dv/dt rating Repetitive avalanche rated Available Logic-level gate drive RDS(on) specified at VGS = 4 V and 5 V 175 °C operating temperature Available Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate u...