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IRL510S Dataheets PDF



Part Number IRL510S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRL510S DatasheetIRL510S Datasheet (PDF)

www.vishay.com IRL510S, SiHL510S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 6.1 2.6 3.3 Single 0.54 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) IRL510SPbF FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated Available • Logic-.

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www.vishay.com IRL510S, SiHL510S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V 6.1 2.6 3.3 Single 0.54 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation D2PAK (TO-263) IRL510SPbF FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated Available • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. D2PAK (TO-263) SiHL510STRL-GE3 a IRL510STRLPbF a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 5 V TC = 25 °C TC = 100 °C ID IDM Linear derating factor (PCB mount) e Single pulse avalanche energy b Avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dv/dt c TC = 25 °C TA = 25 °C EAS IAR EAR PD dv/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12) c. ISD  5.6 A, di/dt  75 A/μs, VDD  VDS, TJ  175 °C d. 1.6 mm from case e. When mounted on 1" square PCB (FR-4 or G-10 material) LIMIT 100 ± 10 5.6 4.0 18 0.29 0.025 100 5.6 4.3 43 3.7 5.5 -55 to +175 300 UNIT V A W/°C mJ A mJ W V/ns °C S20-0684-Rev. D, 07-Sep-2020 1 Document Number: 90380 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRL510S, SiHL510S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Maximum junction-to-ambient  (PCB mount) a RthJA RthJA Maximum junction-to-case (drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material) TYP. - MAX. 62 40 3.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 10 V VDS = 100 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 150 °C VGS = 5 V ID = 3.4 A b VGS = 4 V ID = 2.8 A b VDS = 50 V, ID = 3.4 A b 100 - - V - 0.12 - V/°C 1.0 - 2.0 V - - ± 100 nA - - 25 μA - - 250 - - 0.54  - - 0.76 1.9 - - S Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Internal drain inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD Internal source Inductance LS Drain-Source Body Diode Characteristics VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 250 - - 80 - pF - 15 - - VGS = 5 V ID = 5.6 A, VDS = 80 V, see fig. 6 and 13 b - - - 6.1 - 2.6 nC - 3.3 - 9.3 - VDD = 50 V, ID = 5.6 A, Rg = 12 , RD = 8.4 , see fig. 10 b - 47 - ns - 16 - - 18 - Between lead, 6 mm (0.25") from package and center of die contact D G S - 4.5 - nH - 7.5 - Continuous source-drain diode current Pulsed diode forward current a Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Forward turn-on time IS MOSFET symbol showing the  ISM integral rev.


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