www.vishay.com
IRL510S, SiHL510S
Vishay Siliconix
Power MOSFET
D D2PAK (TO-263)
G
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5 V
6.1 2.6 3.3 Single
0.54
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free Lead (Pb)-free
Note a. See device orientation
D2PAK (TO-263) IRL510SPbF
FEATURES
• Surface-mount
• Available in tape and reel
• Dynamic dv/dt rating • Repetitive avalanche rated
Available
• Logic-level gate drive
• RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature
Available
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application.
D2PAK (TO-263) SiHL510STRL-GE3 a IRL510STRLPbF a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor
VDS
VGS
VGS at 5 V
TC = 25 °C TC = 100 °C
ID
IDM
Linear derating factor (PCB mount) e
Single pulse avalanche energy b Avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery dv/dt c
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD
dv/dt
Operating junction and storage temperature range Soldering recommendations (peak temperature) d
For 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12) c. ISD 5.6 A, di/dt 75 A/μs, VDD VDS, TJ 175 °C d. 1.6 mm from case e. When mounted on 1" square PCB (FR-4 or G-10 material)
LIMIT 100 ± 10 5.6 4.0 18 0.29 0.025 100 5.6 4.3 43 3.7 5.5
-55 to +175 300
UNIT V
A
W/°C mJ A mJ W V/ns °C
S20-0684-Rev. D, 07-Sep-2020
1
Document Number: 90380
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRL510S, SiHL510S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient
Maximum junction-to-ambient (PCB mount) a
RthJA RthJA
Maximum junction-to-case (drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material)
TYP. -
MAX. 62 40 3.5
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance
Forward transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 10 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 5 V
ID = 3.4 A b
VGS = 4 V
ID = 2.8 A b
VDS = 50 V, ID = 3.4 A b
100
-
-
V
-
0.12
-
V/°C
1.0
-
2.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.54
-
-
0.76
1.9
-
-
S
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Internal drain inductance
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf LD
Internal source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
-
250
-
-
80
-
pF
-
15
-
-
VGS = 5 V
ID = 5.6 A, VDS = 80 V, see fig. 6 and 13 b
-
-
-
6.1
-
2.6
nC
-
3.3
-
9.3
-
VDD = 50 V, ID = 5.6 A, Rg = 12 , RD = 8.4 , see fig. 10 b
-
47
-
ns
-
16
-
-
18
-
Between lead, 6 mm (0.25") from package and center of
die contact
D G
S
-
4.5
-
nH
-
7.5
-
Continuous source-drain diode current
Pulsed diode forward current a
Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Forward turn-on time
IS
MOSFET symbol
showing the
ISM
integral rev.