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N-Channel MOSFET. 2SK1918S Datasheet

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N-Channel MOSFET. 2SK1918S Datasheet






2SK1918S MOSFET. Datasheet pdf. Equivalent




2SK1918S MOSFET. Datasheet pdf. Equivalent





Part

2SK1918S

Description

Silicon N-Channel MOSFET



Feature


2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistanc e • High speed switching • Low driv e current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC conve rter • Avalanche ratings Outline LDP AK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain Nove.
Manufacture

Hitachi

Datasheet
Download 2SK1918S Datasheet


Hitachi 2SK1918S

2SK1918S; mber 1996 2SK1918(L), 2SK1918(S) Absol ute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak curren t Body to drain diode reverse drain cur rent Avalanche current Avalanche energy Channel dissipation Channel temperatur e Storage temperature Notes 1. PW ≤ 1 0 µs, duty cycle ≤1 % 2. Value at Tc = 25 °C 3. Value at Tch.


Hitachi 2SK1918S

= 25 °C, Rg ≥ 50 Ω Symbol VDSS VG SS ID I *1 D(pulse) IDR IAP*3 EAR*3 Pch *2 Tch Tstg Ratings 60 ±20 25 100 25 25 53 50 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SK1918(L), 2SK1 918(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to so urce breakdown voltage V(BR)DSS 60 G ate to source breakdown voltage V(BR)G SS ±20 Gate to source leak .


Hitachi 2SK1918S

current IGSS Zero gate voltage drain cur rent IDSS Gate to source cutoff voltage VGS(off) Static drain to source on sta te RDS(on) resistance — — 1.0 — — Typ Max —— —— — ±10 250 — 2.25 0.03 0.04 0.043 0.06 Fo rward transfer admittance |yfs| 12 21 — Input capacitance Ciss — 1450 Output capacitance Reverse transfer capacitance Turn-on delay time Coss Crss td(o.

Part

2SK1918S

Description

Silicon N-Channel MOSFET



Feature


2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistanc e • High speed switching • Low driv e current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC conve rter • Avalanche ratings Outline LDP AK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain Nove.
Manufacture

Hitachi

Datasheet
Download 2SK1918S Datasheet




 2SK1918S
2SK1918(L), 2SK1918(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC - DC converter
Avalanche ratings
Outline
LDPAK
4
4
123
D
12
3
G
S
1. Gate
2. Drain
3. Source
4. Drain
November 1996




 2SK1918S
2SK1918(L), 2SK1918(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25 °C
3. Value at Tch = 25 °C, Rg 50
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
60
±20
25
100
25
25
53
50
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2




 2SK1918S
2SK1918(L), 2SK1918(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
60
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0
Typ Max
——
——
±10
— 250
— 2.25
0.03 0.04
0.043 0.06
Forward transfer admittance |yfs|
12 21 —
Input capacitance
Ciss — 1450 —
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
td(on)
655 —
195 —
20 —
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse Test
tr
td(off)
tf
VDF
trr
— 110 —
— 225 —
— 145 —
— 1.2 —
— 100 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 15 A
VGS = 10 V*1
ID = 15 A
VGS = 4 V*1
ID = 15 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 15 A
VGS = 10 V
RL = 2
IF = 25 A, VGS = 0
IF = 25 A, VGS = 0,
diF / dt = 50 A / µs
See characteristics curves of 2SK1910
3



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