C2996

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications 2SC2996 Unit: mm · High stability oscillation voltage on FM local oscillator · Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 40 30 4 50 -50 150 125 -55~125 Unit V V V mA mA wW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-236 JEITA ― TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain Oscillation output voltage ICBO VCB = 40 V, IE = 0 IEBO VEB = 4 V, IC = 0 hFE (Note) VCE = 6 V, IC = 1 mA Cre fT Cc･rbb’ NF Gpe VOSC VCB = 6 V, f = 1 MHz VCE = 6 V, IC = -1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz VCE = 6 V, IE = -1 mA, f = 100 MHz (Figure 1) VCE = 6 V, f = 100 MHz (Figure 2) Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.5 mA 40 ¾ 240 ¾ 0.9 1.3 pF 150 350 ¾ MHz ¾ 15 30 ps ¾ 4.0 ¾ dB ¾ 15 ¾ dB ¾ 150 ¾ mV 1 2003-03-19 2SC2996 L1: 0.8 mmf silver plated copper wire, 4 T, 10ID, 8 length Figure 1 NF, Gpe Test Circuit L1: 0.8 mmf si...