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2SD1186. D1186 Datasheet

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2SD1186. D1186 Datasheet






D1186 2SD1186. Datasheet pdf. Equivalent




D1186 2SD1186. Datasheet pdf. Equivalent





Part

D1186

Description

2SD1186



Feature


SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD 1186 DESCRIPTION www.datasheet4u.com ¬ ∑With TO-3 package ¬∑High breakdown vol tage ¬∑High speed switching APPLICATION S ¬∑Power switching applications PINNIN G(see Fig.2) PIN DESCRIPTION 1 Base 2 E mitter 3 Collector Fig.1 simplified ou tline (TO-3) and symbol Absolute maxim um ratings(Ta= ) SYMB.
Manufacture

SavantIC

Datasheet
Download D1186 Datasheet


SavantIC D1186

D1186; OL PARAMETER VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage Collect or-emitter voltage Emitter-base voltage Collector current Collector current-pe ak Collector power dissipation Junction temperature Storage temperature CONDI TIONS Open emitter Open base Open colle ctor TC=25 VALUE 1500 800 6 5 7 50 150 -45~150 UNIT V V V A A W SavantIC Se miconductor Silico.


SavantIC D1186

n NPN Power Transistors Product Specifi cation 2SD1186 CHARACTERISTICS Tj=25 unless otherwise specified www.datashee t4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltag e IE=10mA ;IC=0 V(BR)CEO Collector-em itter breakdown voltage IC=10mA ;RBE=7 VCEsat Collector-emitter saturation vo ltage IC=4A; IB=0.8A VBEsat Base-emit ter saturation vol.


SavantIC D1186

tage IC=4A; IB=0.8A ICES Collector cut -off current VCE=1500V; RBE=0 IEBO Em itter cut-off current VEB=6V; IC=0 hF E DC current gain IC=0.3A ; VCE=5V Sw itching times tf Fall time ts Storage time IC=4A ;IB1=0.8A; IB2=-2A MIN TYP . MAX UNIT 6V 800 V 5.0 V 1.5 V 0.5 mA 0.1 mA 10 30 1.0 ¬Ķs 1.0 ¬Ķs 2 Savant IC Semiconductor Silicon NPN Power Tran sistors PACKAGE OUTL.

Part

D1186

Description

2SD1186



Feature


SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD 1186 DESCRIPTION www.datasheet4u.com ¬ ∑With TO-3 package ¬∑High breakdown vol tage ¬∑High speed switching APPLICATION S ¬∑Power switching applications PINNIN G(see Fig.2) PIN DESCRIPTION 1 Base 2 E mitter 3 Collector Fig.1 simplified ou tline (TO-3) and symbol Absolute maxim um ratings(Ta= ) SYMB.
Manufacture

SavantIC

Datasheet
Download D1186 Datasheet




 D1186
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1186
DESCRIPTION
www.datasheet4u.com
·With TO-3 package
·High breakdown voltage
·High speed switching
APPLICATIONS
·Power switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
6
5
7
50
150
-45~150
UNIT
V
V
V
A
A
W




 D1186
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1186
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=7
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICES Collector cut-off current
VCE=1500V; RBE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=0.3A ; VCE=5V
Switching times
tf Fall time
ts Storage time
IC=4A ;IB1=0.8A; IB2=-2A
MIN TYP. MAX UNIT
6V
800 V
5.0 V
1.5 V
0.5 mA
0.1 mA
10 30
1.0 ¬Ķs
1.0 ¬Ķs
2




 D1186
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD1186
Fig.2 outline dimensions (unindicated tolerance:¬Ī0.1mm)
3



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