D1186

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1186 DESCRIPTION www.datasheet4u.com ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 800 6 5 7 50 150 -45~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1186 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=7 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A ICES Collector cut-off current VCE=1500V; RBE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=0.3A ; VCE=5V Switching times tf Fall time ts Storage time IC=4A ;IB1=0.8A; IB2=-2A MIN TYP. MAX UNIT 6V 800 V 5.0 V 1.5 V 0.5 mA 0.1 mA 10 30 1.0 µs 1.0 µs 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u....