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Power MOSFET. IRF620 Datasheet

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Power MOSFET. IRF620 Datasheet






IRF620 MOSFET. Datasheet pdf. Equivalent




IRF620 MOSFET. Datasheet pdf. Equivalent





Part

IRF620

Description

Power MOSFET



Feature


Power MOSFET IRF620, SiHF620 Vishay Sil iconix PRODUCT SUMMARY VDS (V) RDS(on ) () Qg (Max.) (nC) Qgs (nC) Qgd (nC ) Configuration 200 VGS = 10 V 14 3.0 7.9 Single 0.80 TO-220AB D G S D G S N-Channel MOSFET ORDERING INFORMAT ION Package Lead (Pb)-free SnPb FEATU RES • Dynamic dV/dt Rating • Repeti tive Avalanche Rated • Fast Switching • Ease of Paralleling • S.
Manufacture

Vishay

Datasheet
Download IRF620 Datasheet


Vishay IRF620

IRF620; imple Drive Requirements • Compliant t o RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third gene ration Power MOSFETs from Vishay provid e the designer with the best combinatio n of fast switching, ruggedized device design, low on-resistance and cost-effe ctiveness. The TO-220AB package is univ ersally preferred for all commercial-in dustrial application.


Vishay IRF620

s at power dissipation levels to approxi mately 50 W. The low thermal resistance and low package cost of the TO-220AB c ontribute to its wide acceptance throug hout the industry. TO-220AB IRF620PbF SiHF620-E3 IRF620 SiHF620 ABSOLUTE MAX IMUM RATINGS (TC = 25 °C, unless other wise noted) PARAMETER SYMBOL Drain-S ource Voltage Gate-Source Voltage Conti nuous Drain Current.


Vishay IRF620

Pulsed Drain Currenta Linear Derating F actor VGS at 10 V TC = 25 °C TC = 10 0 °C VDS VGS ID IDM Single Pulse Ava lanche Energyb Repetitive Avalanche Cur renta Repetitive Avalanche Energya Maxi mum Power Dissipation Peak Diode Recove ry dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage T emperature Range Soldering Recommendati ons (Peak Temperature.

Part

IRF620

Description

Power MOSFET



Feature


Power MOSFET IRF620, SiHF620 Vishay Sil iconix PRODUCT SUMMARY VDS (V) RDS(on ) () Qg (Max.) (nC) Qgs (nC) Qgd (nC ) Configuration 200 VGS = 10 V 14 3.0 7.9 Single 0.80 TO-220AB D G S D G S N-Channel MOSFET ORDERING INFORMAT ION Package Lead (Pb)-free SnPb FEATU RES • Dynamic dV/dt Rating • Repeti tive Avalanche Rated • Fast Switching • Ease of Paralleling • S.
Manufacture

Vishay

Datasheet
Download IRF620 Datasheet




 IRF620
Power MOSFET
IRF620, SiHF620
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
14
3.0
7.9
Single
0.80
TO-220AB
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF620PbF
SiHF620-E3
IRF620
SiHF620
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 6.1 mH, Rg = 25 , IAS = 5.2 A (see fig. 12).
c. ISD 5.2 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
200
± 20
5.2
3.3
18
0.40
110
5.2
5.0
50
5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91027
S11-0510-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 IRF620
IRF620, SiHF620
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.1 Ab
VDS = 50 V, ID = 3.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 4.8 A, VDS = 160 V,
see fig. 6 and 13b
VDD = 100 V, ID = 4.8 A,
Rg = 18 , RD = 20 , see fig. 10b
MIN.
200
-
2.0
-
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
0.29 - V/°C
- 4.0 V
- ± 100 nA
- 25
μA
- 250
- 0.80
- -S
260 -
100 - pF
30 -
- 14
- 3.0 nC
- 7.9
7.2 -
22 -
ns
19 -
13 -
Internal Drain Inductance
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
LS
IS
ISM
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
D
G
S
- 4.5 -
nH
- 7.5 -
- - 5.2
A
- - 18
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.2 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time
trr
- 150 300 ns
TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/s
Body Diode Reverse Recovery Charge
Qrr
-
0.91 1.8
μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91027
S11-0510-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 IRF620
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF620, SiHF620
Vishay Siliconix
101 Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
100 5.5 V
5.0 V
Bottom 4.5 V
10-1
4.5 V
10-2
10-2
91027_01
20 µs Pulse Width
TC = 25 °C
10-1 100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
150 °C
100
25 °C
10-1
91027_03
4
20 µs Pulse Width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
101
Top
VGS
15 V
10 V
8.0 V
7.0 V
100 6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10-1
4.5 V
10-2
91027_02
20 µs Pulse Width
TC = 150 °C
10-1
100
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.0
ID = 4.8 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91027_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91027
S11-0510-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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