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Power MOSFET. IRF624 Datasheet

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Power MOSFET. IRF624 Datasheet






IRF624 MOSFET. Datasheet pdf. Equivalent




IRF624 MOSFET. Datasheet pdf. Equivalent





Part

IRF624

Description

Power MOSFET



Feature


Power MOSFET IRF624, SiHF624 Vishay Sil iconix PRODUCT SUMMARY VDS (V) RDS(on ) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7 .8 Single 1.1 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATIO N Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitiv e Avalanche Rated • Fast Switching Ease of Paralleling • Sim.
Manufacture

Vishay

Datasheet
Download IRF624 Datasheet


Vishay IRF624

IRF624; ple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available Ro HS* COMPLIANT DESCRIPTION Third genera tion Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost-effect iveness. The TO-220AB package is univer sally preferred for all commercial-indu strial applications .


Vishay IRF624

at power dissipation levels to approxima tely 50 W. The low thermal resistance a nd low package cost of the TO-220AB con tribute to its wide acceptance througho ut the industry. TO-220AB IRF624PbF Si HF624-E3 IRF624 SiHF624 ABSOLUTE MAXIM UM RATINGS (TC = 25 °C, unless otherwi se noted) PARAMETER SYMBOL Drain-Sou rce Voltage Gate-Source Voltage Continu ous Drain Current P.


Vishay IRF624

ulsed Drain Currenta Linear Derating Fac tor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avala nche Energyb Repetitive Avalanche Curre nta Repetitive Avalanche Energya Maximu m Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV /dt Operating Junction and Storage Tem perature Range Soldering Recommendation s (Peak Temperature) .

Part

IRF624

Description

Power MOSFET



Feature


Power MOSFET IRF624, SiHF624 Vishay Sil iconix PRODUCT SUMMARY VDS (V) RDS(on ) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7 .8 Single 1.1 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATIO N Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitiv e Avalanche Rated • Fast Switching Ease of Paralleling • Sim.
Manufacture

Vishay

Datasheet
Download IRF624 Datasheet




 IRF624
Power MOSFET
IRF624, SiHF624
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
14
2.7
7.8
Single
1.1
D
TO-220AB
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF624PbF
SiHF624-E3
IRF624
SiHF624
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 8.3 mH, Rg = 25 Ω, IAS = 4.4 A (see fig. 12).
c. ISD 4.4 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
250
± 20
4.4
2.8
14
0.40
100
4.4
5.0
50
4.8
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91029
S11-0509-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 IRF624
IRF624, SiHF624
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.6 Ab
VDS = 50 V, ID = 2.6 Ab
250 -
-V
- 0.36 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 1.1 Ω
1.5 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 4.4 A, VDS = 200 V,
see fig. 6 and 13b
VDD = 125 V, ID = 4.4 A,
Rg = 18 Ω, RD = 28 Ω, see fig. 10b
-
-
-
-
-
-
-
-
-
-
260 -
77 - pF
15 -
- 14
- 2.7 nC
- 7.8
7.0 -
13 -
ns
20 -
12 -
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 -
nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 4.4
A
- - 14
Body Diode Voltage
VSD
TJ = 25 °C, IS = 4.4 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 4.4 A, dI/dt = 100 A/μsb
-
200 400
ns
Qrr - 0.93 1.9 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91029
S11-0509-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 IRF624
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF624, SiHF624
Vishay Siliconix
101
Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
100
5.0 V
Bottom 4.5 V
10-1
10-1
91029_01
4.5 V
20 µs Pulse Width
TC = 25 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
150 °C
100
25 °C
10-1
91029_03
4
20 µs Pulse Width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
101
Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
100
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
10-1
10-1
91029_02
20 µs Pulse Width
TC = 150 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.0 ID = 4.4 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91029_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91029
S11-0509-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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