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Power MOSFET. SiHF737LC Datasheet

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Power MOSFET. SiHF737LC Datasheet






SiHF737LC MOSFET. Datasheet pdf. Equivalent




SiHF737LC MOSFET. Datasheet pdf. Equivalent





Part

SiHF737LC

Description

Power MOSFET



Feature


Power MOSFET IRF737LC, SiHF737LC Vishay Siliconix PRODUCT SUMMARY VDS (V) RD S(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 300 VGS = 10 V 17 4 .8 7.6 Single TO-220 D 0.75 S D G G S N-Channel MOSFET ORDERING INFORMAT ION Package Lead (Pb)-free SnPb FEATUR ES • Reduced Gate Drive Requirement Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Extre.
Manufacture

Vishay

Datasheet
Download SiHF737LC Datasheet


Vishay SiHF737LC

SiHF737LC; mely High Frequency Operation • Repeti tive Avalanche Rated • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION This new series of low char ge Power MOSFETs achieve significantly lower gate charge over conventional Pow er MOSFETs. Utilizing the new LCDMOS te chnology, the device improvements are a chieved without added product cost, all owing for reduced gate.


Vishay SiHF737LC

drive requirements and total system sav ings. In addition, reduced switching lo sses and improved efficiency are achiev able in a variety of high frequency app lications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements combined with the proven ruggedness and reliability that are cha racteristics of Po.


Vishay SiHF737LC

wer MOSFETs offer the designer a new sta ndard in power transistors for switchin g applications. TO-220 IRF737LCPbF SiH F737LC-E3 IRF737LC SiHF737LC ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless oth erwise noted PARAMETER SYMBOL Drain- Source Voltage Gate-Source Voltage Cont inuous Drain Current Pulsed Drain Curre nta Linear Derating Factor Single Pulse Avalanche Energyb .

Part

SiHF737LC

Description

Power MOSFET



Feature


Power MOSFET IRF737LC, SiHF737LC Vishay Siliconix PRODUCT SUMMARY VDS (V) RD S(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 300 VGS = 10 V 17 4 .8 7.6 Single TO-220 D 0.75 S D G G S N-Channel MOSFET ORDERING INFORMAT ION Package Lead (Pb)-free SnPb FEATUR ES • Reduced Gate Drive Requirement Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Extre.
Manufacture

Vishay

Datasheet
Download SiHF737LC Datasheet




 SiHF737LC
Power MOSFET
IRF737LC, SiHF737LC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
300
VGS = 10 V
17
4.8
7.6
Single
TO-220
D
0.75
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product
cost, allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge Power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristics of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
TO-220
IRF737LCPbF
SiHF737LC-E3
IRF737LC
SiHF737LC
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 5.7 mH, RG = 25 Ω, IAS = 6.1 A (see fig. 12).
c. ISD 6.1 A, dI/dt 270 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
300
± 30
6.1
3.9
24
0.59
120
6.1
7.4
74
3.4
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91050
S-82998-Rev. A, 12-Jan-09
www.vishay.com
1




 SiHF737LC
IRF737LC, SiHF737LC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 300 V, VGS = 0 V
VDS = 240 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 3.7 Ab
VDS = 50 V, ID = 3.7 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 6.1 A, VDS = 240 V,
see fig. 6 and 13b
VDD = 150 V, ID = 6.1 A,
RG = 12 Ω, RD = 24 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD TJ = 25 °C, IS = 6.1 A, VGS = 0 Vb
trr TJ = 25 °C, IF = 6.1 A, dI/dt = 100 A/µsb
Qrr
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
MIN.
300
-
2.0
-
-
-
-
2.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.391
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.75
-
V
V/°C
V
nA
µA
Ω
S
430 -
120 - pF
9.2 -
- 17
- 4.8 nC
- 7.6
6.6 -
21 -
ns
13 -
12 -
4.5 -
nH
7.5 -
- 6.1
A
- 24
- 1.6 V
320 490 ns
1.5 2.2 µC
www.vishay.com
2
Document Number: 91050
S-82998-Rev. A, 12-Jan-09




 SiHF737LC
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRF737LC, SiHF737LC
Vishay Siliconix
102 VGS
Top 15 V
10 V
8.0 V
10 7.0 V
6.0 V
5.5 V
5.0 V
1 Bottom 4.5 V
0.1
4.5 V
10-2
0.1
91050_01
20 µs Pulse Width
TC = 25 °C
1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
102
10
TJ = 150 °C
1 TJ = 25 °C
0.1
10-2
4
91050_03
20 µs Pulse Width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
102
VGS
Top 15 V
10 V
10 8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1 Bottom 4.5 V
4.5 V
0.1
10-2
0.1
91050_02
20 µs Pulse Width
TC = 150 °C
1 10 102
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.0
ID = 6.1 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91050_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91050
S-82998-Rev. A, 12-Jan-09
www.vishay.com
3



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