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SiHF737LC Dataheets PDF



Part Number SiHF737LC
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SiHF737LC DatasheetSiHF737LC Datasheet (PDF)

Power MOSFET IRF737LC, SiHF737LC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 300 VGS = 10 V 17 4.8 7.6 Single TO-220 D 0.75 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION This.

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Power MOSFET IRF737LC, SiHF737LC Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 300 VGS = 10 V 17 4.8 7.6 Single TO-220 D 0.75 S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristics of Power MOSFETs offer the designer a new standard in power transistors for switching applications. TO-220 IRF737LCPbF SiHF737LC-E3 IRF737LC SiHF737LC ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 5.7 mH, RG = 25 Ω, IAS = 6.1 A (see fig. 12). c. ISD ≤ 6.1 A, dI/dt ≤ 270 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 300 ± 30 6.1 3.9 24 0.59 120 6.1 7.4 74 3.4 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91050 S-82998-Rev. A, 12-Jan-09 www.vishay.com 1 IRF737LC, SiHF737LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) RthJA RthCS RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). TYP. - 0.50 - MAX. 62 1.7 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS .


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