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Power MOSFET. IRF644 Datasheet

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Power MOSFET. IRF644 Datasheet






IRF644 MOSFET. Datasheet pdf. Equivalent




IRF644 MOSFET. Datasheet pdf. Equivalent





Part

IRF644

Description

Power MOSFET



Feature


Power MOSFET IRF644, SiHF644 Vishay Sil iconix PRODUCT SUMMARY VDS (V) RDS(on ) () Qg (Max.) (nC) Qgs (nC) Qgd (nC ) Configuration 250 VGS = 10 V 68 11 3 5 Single 0.28 TO-220AB D G S D G S N-Channel MOSFET ORDERING INFORMATIO N Package Lead (Pb)-free SnPb FEATURE S • Dynamic dV/dt Rating • Repetiti ve Avalanche Rated • Fast Switching Ease of Paralleling • Sim.
Manufacture

Vishay

Datasheet
Download IRF644 Datasheet


Vishay IRF644

IRF644; ple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available Ro HS* COMPLIANT DESCRIPTION Third genera tion Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost-effect iveness. The TO-220AB package is univer sally preferred for all commercial-indu strial applications .


Vishay IRF644

at power dissipation levels to approxima tely 50 W. The low thermal resistance a nd low package cost of the TO-220AB con tribute to its wide acceptance througho ut the industry. TO-220AB IRF644PbF Si HF644-E3 IRF644 SiHF644 ABSOLUTE MAXIM UM RATINGS (TC = 25 °C, unless otherwi se noted) PARAMETER SYMBOL Drain-Sou rce Voltage Gate-Source Voltage Continu ous Drain Current P.


Vishay IRF644

ulsed Drain Currenta Linear Derating Fac tor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avala nche Energyb Repetitive Avalanche Curre nta Repetitive Avalanche Energya Maximu m Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV /dt Operating Junction and Storage Tem perature Range Soldering Recommendation s (Peak Temperature) .

Part

IRF644

Description

Power MOSFET



Feature


Power MOSFET IRF644, SiHF644 Vishay Sil iconix PRODUCT SUMMARY VDS (V) RDS(on ) () Qg (Max.) (nC) Qgs (nC) Qgd (nC ) Configuration 250 VGS = 10 V 68 11 3 5 Single 0.28 TO-220AB D G S D G S N-Channel MOSFET ORDERING INFORMATIO N Package Lead (Pb)-free SnPb FEATURE S • Dynamic dV/dt Rating • Repetiti ve Avalanche Rated • Fast Switching Ease of Paralleling • Sim.
Manufacture

Vishay

Datasheet
Download IRF644 Datasheet




 IRF644
Power MOSFET
IRF644, SiHF644
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
68
11
35
Single
0.28
TO-220AB
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF644PbF
SiHF644-E3
IRF644
SiHF644
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 , IAS = 14 A (see fig. 12).
c. ISD 14 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
250
± 20
14
8.5
56
1.0
550
14
13
125
4.8
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91039
S11-0509-Rev. C, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 IRF644
IRF644, SiHF644
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 8.4 Ab
VDS = 50 V, ID = 8.4 Ab
Input Capacitance
Ciss VGS = 0 V,
Output Capacitance
Coss
VDS = 25 V,
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VGS = 10 V
ID = 7.9 A, VDS = 200 V,
see fig. 6 and 13b
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 125 V, ID = 7.9 A,
Rg = 9.1 , RD = 8.7, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
MIN.
250
-
2.0
-
-
-
-
6.7
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.34
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.28
-
V
V/°C
V
nA
μA
S
1300
330
85
-
-
-
11
24
53
49
4.5
-
-
-
68
11
35
-
-
-
-
-
7.5 -
pF
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
- - 14
A
- - 56
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μsb
-
250 500
ns
Qrr - 2.3 4.6 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91039
S11-0509-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 IRF644
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF644, SiHF644
Vishay Siliconix
VGS
Top 15 V
10 V
8.0 V
7.0 V
101 6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100 4.5 V
20 µs Pulse Width
TC = 25 °C
10-1 100 101
91039_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
VGS
Top 15 V
10 V
8.0 V
101 7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
4.5 V
10-1
91039_02
20 µs Pulse Width
TC = 150 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
101 150 °C
25 °C
100
10-1
4
91039_03
20 µs Pulse Width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0
ID = 7.9 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91039_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91039
S11-0509-Rev. C, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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