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Power MOSFET. IRF734 Datasheet

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Power MOSFET. IRF734 Datasheet






IRF734 MOSFET. Datasheet pdf. Equivalent




IRF734 MOSFET. Datasheet pdf. Equivalent





Part

IRF734

Description

Power MOSFET



Feature


Power MOSFET IRF734, SiHF734 Vishay Sil iconix PRODUCT SUMMARY VDS (V) RDS(on ) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 450 VGS = 10 V 45 6.6 2 4 Single 1.2 TO-220 D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES • D ynamic dV/dt Rating • Repetitive Aval anche Rated • Fast Switching • Ease of Paralleling • Simple Dr.
Manufacture

Vishay

Datasheet
Download IRF734 Datasheet


Vishay IRF734

IRF734; ive Requirements • Lead (Pb)-free RoH S COMPLIANT DESCRIPTION Third generati on Power MOSFETs from Vishay provide th e designer with the best combination of fast switching, ruggedized device desi gn, low on-resistance and cost-effectiv eness. The TO-220 package is universall y preferred for all commercial-industri al applications at power dissipation le vels to approximatel.


Vishay IRF734

y 50 W. The low thermal resistance and l ow package cost of the TO-220 contribut e to its wide acceptance throughout the industry. TO-220 IRF734PbF SiHF734-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYM BOL Drain-Source Voltage VDS Gate-So urce Voltage VGS Continuous Drain Cur rent Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 1.


Vishay IRF734

00 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energyb Repetiti ve Avalanche Currenta Repetitive Avalan che Energya EAS IAR EAR Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C PD dV/dt Operating Junc tion and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Mounting Torque 6-32 or M3 screw .

Part

IRF734

Description

Power MOSFET



Feature


Power MOSFET IRF734, SiHF734 Vishay Sil iconix PRODUCT SUMMARY VDS (V) RDS(on ) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 450 VGS = 10 V 45 6.6 2 4 Single 1.2 TO-220 D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free FEATURES • D ynamic dV/dt Rating • Repetitive Aval anche Rated • Fast Switching • Ease of Paralleling • Simple Dr.
Manufacture

Vishay

Datasheet
Download IRF734 Datasheet




 IRF734
Power MOSFET
IRF734, SiHF734
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
450
VGS = 10 V
45
6.6
24
Single
1.2
TO-220
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free
RoHS
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRF734PbF
SiHF734-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 4.9 A (see fig. 12).
c. ISD 4.9 A, dI/dt 80 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
450
± 20
4.9
3.1
20
0.59
330
4.9
7.4
74
4.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91049
S-82998-Rev. A, 12-Jan-08
www.vishay.com
1




 IRF734
IRF734, SiHF734
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 450 V, VGS = 0 V
VDS = 360 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.9 Ab
VDS = 50 V, ID = 2.9 Ab
450 -
-V
- 0.63 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
- - 1.2 Ω
3.0 -
-S
Input Capacitance
Ciss
VGS = 0 V,
- 680 -
Output Capacitance
Coss
VDS = 25 V,
- 190 - pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
- 75 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - - 45
ID = 4.9 A, VDS = 360 V
Qgs
VGS = 10 V
see fig. 6 and 13b
-
- 6.6 nC
Qgd - - 24
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 225 V, ID = 4.9 A
RG = 12 Ω, RD = 45 Ω, see fig. 10b
- 5.9 -
- 22 -
ns
- 40 -
- 21 -
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 -
nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 4.9
A
- - 20
Body Diode Voltage
VSD TJ = 25 °C, IS = 4.9 A, VGS = 0 Vb - - 2.0 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = 4.9 A, dI/dt = 100 A/µsb
-
460 690 ns
Qrr - 1.8 2.7 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91049
S-82998-Rev. A, 12-Jan-08




 IRF734
IRF734, SiHF734
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS
Top 15 V
101
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
91049_01
4.5 V
20 µs Pulse Width
TC = 25 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
150 °C
25 °C
100
91049_03
4
20 µs Pulse Width
VDS = 50 V
5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
101 Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
100
91049_02
20 µs Pulse Width
TC = 150 °C
100 101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.5
ID = 4.9 A
3.0 VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91049_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91049
S-82998-Rev. A, 12-Jan-08
www.vishay.com
3



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